在单晶β-Ga2O3衬底上制备Ga2O3肖特基势垒二极管

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6257021

K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi

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引用次数: 3

摘要

综上所述，我们在单晶ß-Ga2O3(010)衬底上制备了Ga2O3 sdd。器件的理想因数接近1.0，反向VBR较高，具有良好的器件特性。这些结果表明，Ga2O3 sdd在功率器件应用方面具有与Si和典型的宽间隙半导体SiC和GaN相当甚至更大的潜力。这项工作得到了日本NEDO和JST PRESTO项目的部分支持。

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Ga2O3 Schottky barrier diodes fabricated on single-crystal β-Ga2O3 substrates

In conclusion, we fabricated Ga₂O₃ SBDs on a single-crystal ß-Ga₂O₃ (010) substrate. The devices showed good device characteristics such as an ideal factor close to 1.0 and reasonably high reverse VBR. These results indicate that Ga₂O₃ SBDs have comparable or even more potential than Si and typical widegap semiconductors SiC and GaN have for power device applications. This work was partially supported by NEDO and JST PRESTO programs, Japan.

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70th Device Research Conference

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