High current density InAsSb/GaSb tunnel field effect transistors

Abstract

Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density (ION,reverse = 17.5 mA/μm2) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb heterostructure nanowires to operate as TFETs. We present device characterization of InAs0.85Sb0.15/GaSb nanowire TFETs, which exhibit record-high on-current levels.