Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain

Abstract

This paper report the first demonstration of a fully functional wafer-bonded current aperture vertical electron transistor (BAVET). A maximum drain current (I_d) of 29 mA and transconductance (g_{m_d}) of 7.4 mS at a V_gs = 0 V is measured for a device with a width of (75x2) f.lm and an aperture length (L_ap) of 8 μm.