2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)最新文献

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RF GaN Device Model Survey and Model Parameter Extraction Flows 射频GaN器件模型综述及模型参数提取流程
Raj Sodhi, R. Tinti, M. Dunn, Ma Long
{"title":"RF GaN Device Model Survey and Model Parameter Extraction Flows","authors":"Raj Sodhi, R. Tinti, M. Dunn, Ma Long","doi":"10.1109/ICSICT49897.2020.9278132","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278132","url":null,"abstract":"GaN (Gallium-Nitride) devices continue to advance in market acceptance for 5G, radar, and power electronics due to their high-power handling capability and linearity. GaN technology outperforms other RF technologies because it can simultaneously offer the highest power, gain, and efficiency combination at a given frequency. We will review market trends, technology and challenges in using these devices. In 2018, two new physics-based GaN models were accepted as industry standard amid a backdrop of other models. To address the growing need for accurate RF GaN models, new model parameter extraction flows are presented within the IC-CAP software framework, leveraging DC-IV, capacitance and S-parameter data.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74644605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Low-Pass Sense and Control Circuit for Switching Amplifier in Wideband Hybrid Envelope Tracking Supply Modulator 宽带混合包络跟踪电源调制器中开关放大器的低通检测与控制电路
Xueli Zhang, Peng Xu, Zhiliang Hong
{"title":"A Low-Pass Sense and Control Circuit for Switching Amplifier in Wideband Hybrid Envelope Tracking Supply Modulator","authors":"Xueli Zhang, Peng Xu, Zhiliang Hong","doi":"10.1109/ICSICT49897.2020.9278281","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278281","url":null,"abstract":"A low-pass sense and control circuit for hybrid envelope tracking supply modulator (ETSM) with wideband envelope signal is presented. The second-order low-pass filtering (LPF) circuit controls the switching frequency fsw of the switching amplifier (SA). Although only low-frequency signal is sampled, the SA tracks the average output power at a reasonable speed and the reduced fsw improves the efficiency of the whole ETSM. It is more suitable for wideband envelope signals than traditional methods. This circuit is applied to wideband envelope signal especially to frequencies greater than 100MHz. In our design, a 150MHz envelope signal is used for test and an average switching frequency about 3.6 MHz is obtained. With the efficiency of 94%, the SA can track the average output power in a reasonable speed.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"17 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75370417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 681 GOPS/W~3.59 TOPS/W CNN Accelerator Based on Novel Data Flow Scheduling Scheme 基于新数据流调度方案的681 GOPS/W~3.59 TOPS/W CNN加速器
Yan Li, Xiaoling Ding, Haichuan Yang, Xuan Zhang, Yu Gong, Bo Liu
{"title":"A 681 GOPS/W~3.59 TOPS/W CNN Accelerator Based on Novel Data Flow Scheduling Scheme","authors":"Yan Li, Xiaoling Ding, Haichuan Yang, Xuan Zhang, Yu Gong, Bo Liu","doi":"10.1109/ICSICT49897.2020.9278238","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278238","url":null,"abstract":"This paper proposes a deep convolutional neural network(CNN) accelerator for image recognition applications based on a novel data flow scheduling scheme. To accelerate the CNN with high energy efficient, we propose two optimization approaches including: the execution time prediction model based on data balance scheduling, and the dynamic voltage control mechanism. The proposed voltage control mechanism can dynamically configure the working frequency of CNN computing and data accessing respectively. To solve the data imbalance between memory and computing, we optimized the architecture based on approximate computing and data scheduling, and implement a data scheduling scheme by optimizing and adjusting the supply voltage of computing arrays. Implemented under TSMC 45nm process, the proposed accelerator for different CNNs can realize 4/8/16bit data bit width computation. Compared with the state-of-the-art CNN accelerators, it performs 2.70~2.83 times better in energy efficiency.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"95 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74365317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and Implementation of NFC Smart Card SoC with eSTT-MRAM IP 基于eSTT-MRAM IP的NFC智能卡SoC设计与实现
Kaiwen Lu, Xingjie Liu, Yong Chen, Dongsheng Liu, Bo Liu, Liang Wu
{"title":"Design and Implementation of NFC Smart Card SoC with eSTT-MRAM IP","authors":"Kaiwen Lu, Xingjie Liu, Yong Chen, Dongsheng Liu, Bo Liu, Liang Wu","doi":"10.1109/ICSICT49897.2020.9278138","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278138","url":null,"abstract":"In this paper, an eSTT-MRAM-based NFC (Near Field Communication) Smart Card SoC (system-on-chip) architecture compatible with ISO/IEC 14443-A is proposed. ARM SC100 processor is adopted in the SoC, and the system integrates ISO/IEC 14443-A digital baseband controller, clock management module, AES coprocessor and eSTT-MRAM IP, which are connected by the AMBA™ 2.0 bus. The SoC chip is fabricated with SMIC 40nm CMOS technology with an area of 4035.8µm × 2217.4µm. The equivalence gate counts except 4Mb eSTT-MRAM IP are about 600K gates of standard cell, and the average power consumption is 20.1mW@13.56MHz. Measurement results show that the proposed SoC can correctly handle all expected command operations and the technique standards on ISO/IEC 14443-A can be well satisfied.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"446 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75081962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Small-world-based Structural Pruning for Efficient FPGA Inference of Deep Neural Networks 基于小世界结构剪枝的高效FPGA深度神经网络推理
Gokul Krishnan, Yufei Ma, Yu Cao
{"title":"Small-world-based Structural Pruning for Efficient FPGA Inference of Deep Neural Networks","authors":"Gokul Krishnan, Yufei Ma, Yu Cao","doi":"10.1109/ICSICT49897.2020.9278024","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278024","url":null,"abstract":"DNN pruning approaches usually trim model parameters without exploiting the intrinsic graph properties and hardware preferences. As a result, an FPGA accelerator may not directly benefit from such random pruning, with additional cost on indexing and control modules. Inspired by the observation that the brain and real-world networks follow a Small-World model, we propose a graph-based progressive structural pruning technique that integrates local clusters and global sparsity in the Small-World graph and the data locality in the FPGA dataflow. The proposed technique hierarchically trims the DNN into a sparse graph before training, which follows both the Small-World property and FPGA dataflow preferences, such as grouped non-zero and zero parameters to skip data load and corresponding computation. The pruned model is then trained for a given dataset and fine-tuned to achieve the best accuracy. We evaluate the proposed technique for multiple DNNs with different datasets. It achieves state-of-the-art sparsity ratio of up to 76% for CIFAR-10, 84% for CIFAR-100, and 76% for the SVHN datasets. Moreover, the generated sparse DNN achieves up to 4× improvement in throughput for an output stationary FPGA architecture across different DNNs with a marginal hardware overhead.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"198 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77485417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Reinforcement Learning Driven Physical Synthesis : (Invited Paper) 强化学习驱动物理合成:(特邀论文)
Zhuolun He, Lu Zhang, Peiyu Liao, Yuzhe Ma, Bei Yu
{"title":"Reinforcement Learning Driven Physical Synthesis : (Invited Paper)","authors":"Zhuolun He, Lu Zhang, Peiyu Liao, Yuzhe Ma, Bei Yu","doi":"10.1109/ICSICT49897.2020.9278350","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278350","url":null,"abstract":"Physical synthesis has emerged as a core component in a modern circuit design flow. Large-scale optimization problem is often involved in the process, which requires substantial efforts to solve and no optimality is guaranteed. Reinforcement learning provides one direction to deal with the above issue by automatically acquiring knowledge through experience, which has shown great success in various applications. In this paper, we introduce the foundation of and the progress in reinforcement learning, and review some recent approaches in applying reinforcement learning to physical synthesis. We hope to inspire more work and to see more talented ideas in this field.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"79 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77525189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Multi-band CMOS VCO Based on Triple-coil Inductors 基于三圈电感的多频带CMOS压控振荡器
Peng Yu, Zhijian Chen, Bin Li, Xiao-Ling Lin, Changhua Zhou
{"title":"A Multi-band CMOS VCO Based on Triple-coil Inductors","authors":"Peng Yu, Zhijian Chen, Bin Li, Xiao-Ling Lin, Changhua Zhou","doi":"10.1109/ICSICT49897.2020.9278156","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278156","url":null,"abstract":"This paper presents a small-area and multiband voltage-controlled oscillator (VCO) using triple-coil inductors which can be used for wideband frequency synthesizer. A wide tuning range generally requires a large chip area. By regulating the coupling coefficient of the triple-coil inductors and parasitic capacitance of cross-couple pair, the triple-mode operation of VCO can be stably implemented. Notably, the triple-coil inductor can be realized within the same area as a single inductor. The VCO exhibits a wide tuning range from 6.6 GHz to 13.1 GHz, and a phase noise lower than -100 dBc/Hz at 1 MHz offset over the entire tuning range.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"13 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81613414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-volatile In Memory Dual-Row X(N)OR Operation with Write Back Circuit Based on 1T1C FeRAM 基于1T1C FeRAM的非易失性内存双行X(N)OR写回电路
Wang Qiao, Yuling Zhao, Jianguo Yang, Chao Liu, Pengfei Jiang, Qingting Ding, Tiancheng Gong, Q. Luo, H. Lv, Ming Liu
{"title":"Non-volatile In Memory Dual-Row X(N)OR Operation with Write Back Circuit Based on 1T1C FeRAM","authors":"Wang Qiao, Yuling Zhao, Jianguo Yang, Chao Liu, Pengfei Jiang, Qingting Ding, Tiancheng Gong, Q. Luo, H. Lv, Ming Liu","doi":"10.1109/ICSICT49897.2020.9278353","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278353","url":null,"abstract":"Von Neumann computing architecture system has the characteristic of high energy consumption and slow speed due to the memory bottlenecks of hardware platforms when it processes computing tasks that rely on big data. The drawbacks of memory bottlenecks in traditional structures can be improved significantly using PIM (processing-in-memory) architectures. FeRAM (ferroelectric memory) is a novel memory with the advantages of simple structure, high integration and low power consumption. Thus, it has always been considered as one of the most proper memories for PIM. In this paper, FeRAM was designed as memory and converted to basic computing cells, based on its charge sharing function. A mechanism of two-line activation was adopted during the process of X(N)OR. Then, peripheral circuits were moderately modified to implement bit-by-bit X(N)OR operations between operands stored in the same bit line. Besides, the simulation of X(N)OR logic was carried out. The final simulation results show that the speed, area and power consumption of current FeRAM-based logic operations are improved. The research can be used to enhance the performance of arithmetic logic units for future PIM.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85240126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design of A Wide-Range PLL Based on Dual VCO Technique for Sub-1G IoT Application 基于双VCO技术的亚1g物联网宽量程锁相环设计
Ming Wang, Miao-Xing Xie, Xianglong Li, Yabin Sun, Xiaojin Li, Yanfang Ding, Yanling Shi
{"title":"Design of A Wide-Range PLL Based on Dual VCO Technique for Sub-1G IoT Application","authors":"Ming Wang, Miao-Xing Xie, Xianglong Li, Yabin Sun, Xiaojin Li, Yanfang Ding, Yanling Shi","doi":"10.1109/ICSICT49897.2020.9278135","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278135","url":null,"abstract":"A wide-range charge pump phase-locked loop (CPPLL) for Sub-1G Internet-of-Things (IoT) application is proposed in this paper. Dual voltage-controlled oscillator (VCO) technique is adopted to achieve wide frequency tuning range. In addition, the Kvcocompensation method is also employed to stabilize Kvcoin the entire frequency tuning range, combined with dual VCO structure. The design has been fabricated in CMOS 0.11 µm technology and the presented PLL achieved a wide frequency tuning range from 54.8MHz to 1.086GHz, with die area of 0.8 mm2. The measured phase noise is -85.92dBc/Hz and -116.23dBc/Hz at 100kHz and 1MHz, respectively, and the measured reference spur is -63dBc at 24MHz.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"30 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76991792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of Silicon Controlled Rectifier Devices with Different Dimensions for ESD Protection 不同尺寸可控硅整流器ESD防护研究
Yize Wang, Junmin He, Y. Hu, Yubo Wang, Yuan Wang
{"title":"Study of Silicon Controlled Rectifier Devices with Different Dimensions for ESD Protection","authors":"Yize Wang, Junmin He, Y. Hu, Yubo Wang, Yuan Wang","doi":"10.1109/ICSICT49897.2020.9278319","DOIUrl":"https://doi.org/10.1109/ICSICT49897.2020.9278319","url":null,"abstract":"This work mainly shows the impact of dimension changes of silicon controlled rectifier (SCR) devices on ESD protection. Based on 110-nm technology node, the key parameters D1, D2, and D3 of SCR device are variable to obtain the relevant measurement. Further, the detail analysis from the perspective of high-voltage application for these measured results are summarized in this work.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73609167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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