Study of Silicon Controlled Rectifier Devices with Different Dimensions for ESD Protection

Abstract

This work mainly shows the impact of dimension changes of silicon controlled rectifier (SCR) devices on ESD protection. Based on 110-nm technology node, the key parameters D1, D2, and D3 of SCR device are variable to obtain the relevant measurement. Further, the detail analysis from the perspective of high-voltage application for these measured results are summarized in this work.