不同尺寸可控硅整流器ESD防护研究

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278319

Yize Wang, Junmin He, Y. Hu, Yubo Wang, Yuan Wang

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引用次数: 1

摘要

本文主要研究了可控硅器件尺寸变化对ESD防护的影响。基于110纳米技术节点，通过改变可控硅器件的关键参数D1、D2、D3，获得相应的测量结果。并从高压应用的角度对这些测量结果进行了详细分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of Silicon Controlled Rectifier Devices with Different Dimensions for ESD Protection

This work mainly shows the impact of dimension changes of silicon controlled rectifier (SCR) devices on ESD protection. Based on 110-nm technology node, the key parameters D1, D2, and D3 of SCR device are variable to obtain the relevant measurement. Further, the detail analysis from the perspective of high-voltage application for these measured results are summarized in this work.

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来源期刊

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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