RF GaN Device Model Survey and Model Parameter Extraction Flows

Abstract

GaN (Gallium-Nitride) devices continue to advance in market acceptance for 5G, radar, and power electronics due to their high-power handling capability and linearity. GaN technology outperforms other RF technologies because it can simultaneously offer the highest power, gain, and efficiency combination at a given frequency. We will review market trends, technology and challenges in using these devices. In 2018, two new physics-based GaN models were accepted as industry standard amid a backdrop of other models. To address the growing need for accurate RF GaN models, new model parameter extraction flows are presented within the IC-CAP software framework, leveraging DC-IV, capacitance and S-parameter data.