Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques最新文献

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Radiation Damage in Iron Oxides upon Fe Ion Implantation 铁离子注入对氧化铁的辐射损伤
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700655
V. A. Andrianov, E. A. Vorobyova, A. P. Evseev, A. L. Erzinkyan, A. A. Bush, P. V. Lyamkin, T. V. Kulevoi, K. E. Pryanishnikov, P. A. Fedin
{"title":"Radiation Damage in Iron Oxides upon Fe Ion Implantation","authors":"V. A. Andrianov,&nbsp;E. A. Vorobyova,&nbsp;A. P. Evseev,&nbsp;A. L. Erzinkyan,&nbsp;A. A. Bush,&nbsp;P. V. Lyamkin,&nbsp;T. V. Kulevoi,&nbsp;K. E. Pryanishnikov,&nbsp;P. A. Fedin","doi":"10.1134/S1027451026700655","DOIUrl":"10.1134/S1027451026700655","url":null,"abstract":"<p>To investigate radiation-induced damage, Fe ions with an energy of 5.6 MeV and a fluence of 10<sup>15</sup> cm<sup>–2</sup> were implanted into two iron oxides: hematite Fe<sub>2</sub>O<sub>3</sub> and magnetite Fe<sub>3</sub>O<sub>4</sub>. Conversion electron Mössbauer spectra, Raman spectra, and data from electron and atomic force microscopy were obtained for the irradiated surfaces, as well as after removal of a surface layer with a thickness of 1 μm. Irradiation affected the Mössbauer spectra of hematite and magnetite in different ways. In hematite, an additional <i>H</i><sub>2</sub> sextet was formed, corresponding to defect Fe sites. In magnetite, irradiation caused only line broadening of the <i>B</i> sextet. The study concludes that the spinel structure of Fe<sub>3</sub>O<sub>4</sub> is more resistant to irradiation effects. In the center of the Mössbauer spectra of both oxides, quadrupole doublets corresponding to the Fe<sup>2+</sup> phase were observed before polishing. The formation of this phase is interpreted within the thermal spike model as a result of material quenching in the ion track region. According to electron and atomic force microscopy data, after polishing to a depth of approximately 1 μm, a sharp increase in surface roughness was observed, with the formation of pits up to 300 nm deep. The destruction of the subsurface layer is evidently caused by a high concentration of radiation-induced defects, which form regions of large stress, leading to crack formation and loss of layer continuity.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"263 - 269"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-Dimensional Model of Diffusion of Nonequilibrium Minority Charge Carriers Generated by an Electron Probe in a Homogeneous Semiconductor Target in the Presence of Two Recombination Channels 两个复合通道存在时,电子探针产生的非平衡少数载流子在均匀半导体靶中的三维扩散模型
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700916
E. V. Seregina, M. A. Stepovich, M. N. Filippov, V. V. Kalmanovich
{"title":"Three-Dimensional Model of Diffusion of Nonequilibrium Minority Charge Carriers Generated by an Electron Probe in a Homogeneous Semiconductor Target in the Presence of Two Recombination Channels","authors":"E. V. Seregina,&nbsp;M. A. Stepovich,&nbsp;M. N. Filippov,&nbsp;V. V. Kalmanovich","doi":"10.1134/S1027451026700916","DOIUrl":"10.1134/S1027451026700916","url":null,"abstract":"<p>The process of nonstationary diffusion of nonequilibrium minority charge carriers occurring after the termination of electron-beam irradiation of a semiconductor target is considered. Mathematical models of three-dimensional diffusion of charge carriers generated by an electron beam with energies up to 50 keV in a homogeneous semiconductor material were investigated for the cases of one or two independent recombination channels. Model calculations were performed for the diffusion of excitons in homogeneous single-crystal gallium nitride.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"457 - 464"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synergistic ANN-Ant Colony Optimization for Stacking Sequence and Variable-Thickness Ply Engineering of Carbon Fiber/SiC-Si3N4 Hybrid Ceramic Laminates: Delamination-Dominated Fracture Pathways Revealed through SEM Microstructural Analysis 碳纤维/SiC-Si3N4杂化陶瓷层合板叠层顺序和变厚度层合工程的协同ann -蚁群优化:通过SEM微观结构分析揭示分层主导断裂途径
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700990
Muhammed Anaz Khan,  Ajith Raj Rajendran
{"title":"Synergistic ANN-Ant Colony Optimization for Stacking Sequence and Variable-Thickness Ply Engineering of Carbon Fiber/SiC-Si3N4 Hybrid Ceramic Laminates: Delamination-Dominated Fracture Pathways Revealed through SEM Microstructural Analysis","authors":"Muhammed Anaz Khan,&nbsp; Ajith Raj Rajendran","doi":"10.1134/S1027451026700990","DOIUrl":"10.1134/S1027451026700990","url":null,"abstract":"&lt;p&gt;Carbon fiber-reinforced silicon carbide-silicon nitride (CF/SiC‒Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;) hybrid ceramic laminates represent a frontier class of structural materials for hypersonic thermal protection systems, turbine shroud liners, and re-entry vehicle leading edges, where the simultaneous demands of interlaminar cohesion, fracture resistance, and cyclic impact endurance push monolithic ceramic composites to their operational limits. This study introduces a synergistic Artificial Neural Network-Ant Colony Optimization (ANN-ACO) hybrid computational framework for the concurrent engineering of stacking sequence, individual ply thickness, and SiC : Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; powder blend ratio in a 15-dimensional mixed-integer design space. Silicon nitride is employed as the primary matrix modifier, exploiting its superior fracture toughness (5‒7 MPa m&lt;sup&gt;0.5&lt;/sup&gt;), in-situ self-reinforcing β-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; whisker growth mechanism, and resistance to oxidative degradation, properties that synergistically complement unmatched thermal stability of silicon carbide. A deep feedforward ANN surrogate (four hidden layers with 512-256-128-64 neurons, ReLU activation, Batch Normalization, trained on 200 Definitive Screening Design experimental data points) achieves test-set &lt;i&gt;R&lt;/i&gt;&lt;sup&gt;2&lt;/sup&gt; ≥ 0.94 and predicts interlaminar shear strength (ILSS), Mode-I fracture energy (&lt;i&gt;G&lt;/i&gt;&lt;sub&gt;Ic&lt;/sub&gt;), and Charpy impact toughness with root-mean-square errors below 3 MPa, 20 J/m&lt;sup&gt;2&lt;/sup&gt;, and 2 kJ/m&lt;sup&gt;2&lt;/sup&gt;, respectively. The ACO pheromone engine navigates the 4&lt;sup&gt;6&lt;/sup&gt;= 4096-node discrete orientation space by encoding ply stacking angles as graph nodes and concurrently optimizing continuous thickness and composition variables, reaching convergence in 180‒220 iterations. Three ply thickness regimes-T1 (0.28 mm), T2 (0.35 mm), and T3 (0.42 mm)-across 6-ply laminates are experimentally fabricated by hot pressing at 1680‒1720°C in nitrogen atmosphere and subjected to ASTM D2344 interlaminar shear, DCB Mode-I fracture (ASTM E1922), ENF Mode-II fracture (ASTM D7905), unnotched Charpy impact (ASTM D6110), and sinusoidal fatigue crack growth testing. The ANN-ACO-optimized configuration T2 [0/45/−45/90/45/0]&lt;sub&gt;S&lt;/sub&gt; with 55 : 45 SiC : Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; achieves ILSS = 68.4 MPa, &lt;i&gt;G&lt;/i&gt;&lt;sub&gt;Ic&lt;/sub&gt; = 522 J/m&lt;sup&gt;2&lt;/sup&gt;, and Charpy impact energy of 38.2 kJ/m&lt;sup&gt;2&lt;/sup&gt;-representing improvements of 42, 67, and 55% over an unoptimized [0/90/0/90/0/90] baseline, respectively. Scanning electron microscope (SEM) fractographic analysis of all post-failure specimens provides direct evidence of β-Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; whisker pull-out zones, fiber-matrix interfacial debonding geometries, interlaminar crack propagation channels, and transgranular SiC cleavage planes, establishing microstructure-property correlations consistent with the measured mechanical performance hierarchy. The absence of EDS or EBSD capabilities is explic","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"509 - 523"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Silicon Nitride Film after Zn/O Implantation Zn/O注入后氮化硅薄膜的研究
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700722
V. V. Privezentsev, A. A. Firsov, V. S. Kulikauskas, V. V. Zatekin, D. A. Kiselev, S. S. Starukhina, A. N. Tereshchenko
{"title":"Study of Silicon Nitride Film after Zn/O Implantation","authors":"V. V. Privezentsev,&nbsp;A. A. Firsov,&nbsp;V. S. Kulikauskas,&nbsp;V. V. Zatekin,&nbsp;D. A. Kiselev,&nbsp;S. S. Starukhina,&nbsp;A. N. Tereshchenko","doi":"10.1134/S1027451026700722","DOIUrl":"10.1134/S1027451026700722","url":null,"abstract":"<p>The results of a study of submicron particles formation at the interface of a Si<sub>3</sub>N<sub>4</sub> film on a Si substrate are presented. The silicon nitride film was implanted with <sup>64</sup>Zn<sup>+</sup> ions with a dose of 5 × 10<sup>16</sup> cm<sup>–2</sup> and energy of 60 keV and <sup>16</sup>O<sup>+</sup> ions with a dose of 7 × 10<sup>16</sup> cm<sup>–2</sup> and energy of 20 keV. The Si<sub>3</sub>N<sub>4</sub> film was preliminary deposited on a silicon substrate using the gas-phase method. Then the implanted samples were annealed in Ar in steps of 100°C for 1 h at each step in the temperature range of 400‒800°C. The profiles of the implanted impurity were studied using Rutherford backscattering spectroscopy. The surface morphology of the samples was studied using scanning probe microscopy in trapping mode.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"309 - 314"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation Stability of TiO2/SiO2 Bilayer Hollow Particles under Proton Irradiation 质子辐照下TiO2/SiO2双层中空粒子的辐射稳定性
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700709
N. G. Morev, I. V. Verkhoturova, V. V. Neshchimenko, Chundong Li, Jinpeng Lv
{"title":"Radiation Stability of TiO2/SiO2 Bilayer Hollow Particles under Proton Irradiation","authors":"N. G. Morev,&nbsp;I. V. Verkhoturova,&nbsp;V. V. Neshchimenko,&nbsp;Chundong Li,&nbsp;Jinpeng Lv","doi":"10.1134/S1027451026700709","DOIUrl":"10.1134/S1027451026700709","url":null,"abstract":"<p>A comparative analysis was performed of the diffuse reflectance spectra and their changes after irradiation with 100 keV protons of TiO<sub>2</sub>/SiO<sub>2</sub> bilayer hollow particles. The intensity of radiation-induced absorption bands in hollow TiO<sub>2</sub>/SiO<sub>2</sub> particles is lower than that in TiO<sub>2</sub> microparticles. The enhanced radiation resistance effect of TiO<sub>2</sub>/SiO<sub>2</sub> bilayer hollow particles may be attributed to the high specific surface area of the particles, which serves as a sink for radiation defects, as well as to the presence of a protective amorphous SiO<sub>2</sub> layer on the surface of TiO<sub>2</sub> microspheres, which leads to a lower concentration of absorption centers in TiO<sub>2</sub> responsible for absorption in the visible spectral range.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"295 - 302"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of the Influence of Temperature on Interaction of a Cathode with a Thin Insulating Film and a Glow Gas Discharge Plasma in a Mixture of Argon and Mercury Vapor 温度对氩气和汞蒸气混合物中阴极与薄绝缘膜和辉光气体放电等离子体相互作用影响的建模
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700850
G. G. Bondarenko, V. I. Kristya, D. O. Savichkin, M. R. Fisher
{"title":"Modeling of the Influence of Temperature on Interaction of a Cathode with a Thin Insulating Film and a Glow Gas Discharge Plasma in a Mixture of Argon and Mercury Vapor","authors":"G. G. Bondarenko,&nbsp;V. I. Kristya,&nbsp;D. O. Savichkin,&nbsp;M. R. Fisher","doi":"10.1134/S1027451026700850","DOIUrl":"10.1134/S1027451026700850","url":null,"abstract":"<p>A model of a glow gas discharge in a mixture of argon and mercury vapor is formulated in the presence of a thin insulating film on the cathode surface. Dependences of the discharge characteristics on the mixture temperature are calculated in the range of its variation, in which a noticeable contribution to ionization of the working gas is made by the ionization of mercury atoms by metastable excited argon atoms (the Penning reaction). It is shown that in the case of a cathode without an insulating film when the temperature increases until the relative mercury content in the mixture reaches 5 × 10<sup>–3</sup>, a reduction of the electric field strength in the discharge cathode layer takes place due to an increase of the mixture ionization coefficient. A further increase of the temperature, due to growing mercury content in the mixture and a decrease in the contribution of the Penning reaction to the mixture ionization coefficient, results in its reduction, followed by an increase of the electric field strength. At the existence of an insulating film on the cathode a contribution to its effective electron emission coefficient, along with the ion-electron emission, is also made by the temperature-enhanced field electron emission from the cathode metal substrate into the insulating film, caused by the existence of a strong electric field in it. As a result of the increase in temperature, the cathode effective ion-electron emission coefficient decreases due to a reduction in the discharge current density. This leads to a smaller decrease in the electric field strength in the discharge cathode layer than that in case of a cathode without a film, only in a small interval of cathode temperature variation. Therefore, the cathode without an insulating film under its heating in glow discharge is sputtered more intensively than the cathode with the film, which results in a shorter service life of lamps with such cathodes.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"417 - 423"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and Hydrogen Decrepitation of High-Entropy TiVCrNbZr and TiVCrNbCo Alloys 高熵TiVCrNbZr和TiVCrNbCo合金的合成与氢衰
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700886
T. L. Murashkina, S. P. Korneev, A. E. Zhdanov, K. D. Kamelina
{"title":"Synthesis and Hydrogen Decrepitation of High-Entropy TiVCrNbZr and TiVCrNbCo Alloys","authors":"T. L. Murashkina,&nbsp;S. P. Korneev,&nbsp;A. E. Zhdanov,&nbsp;K. D. Kamelina","doi":"10.1134/S1027451026700886","DOIUrl":"10.1134/S1027451026700886","url":null,"abstract":"<p>This study reports the synthesis and structural characterization of two equimolar high-entropy alloys, TiVCrNbCo and TiVCrNbZr, which are promising hydrogen storage materials. The alloys were produced via vacuum arc melting of elemental powders under an argon atmosphere; then their phase composition and microstructure were characterized using X-ray diffraction (XRD) and scanning electron microscopy with energy-dispersive spectroscopy (SEM–EDS), both before and after hydrogen decrepitation (HD process). The TiVCrNbCo alloy predominantly crystallizes in the hexagonal Laves C14 phase, whereas the TiVCrNbZr alloy forms a structure consisting whereas the TiVCrNbZr alloy forms a structure consisting of mixtures of cubic Laves C15 and body-centered cubic (BCC) phases. Hydrogen process transforms both alloys into finely dispersed powders, leaving residual hydrogen contents of 0.19 wt % for TiVCrNbCo and 1.8 wt % for TiVCrNbZr. Phase analysis after HD process shows that TiVCrNbCo retains the hexagonal C14 phase along with a secondary C14 + H phase, which likely corresponds to a solid solution of hydrogen. In contrast, the HD-crushed TiVCrNbZr powder contains the cubic Laves C15 phase and an face-centered cubic (FCC), phase, indicating a BCC-to-FCC transformation characteristic of hydrogenation-induced structural changes. In situ XRD measurements reveal no significant structural rearrangement upon heating of the HD-crushed samples; however, clear changes in reflection intensities are observed due to thermal lattice expansion and progressive hydrogen desorption. Hydrogen release occurs at approximately 200°C for TiVCrNbCo and 500°C for TiVCrNbZr.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"436 - 446"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Statistical Analysis of Transverse Energy Levels of 40–50 GeV Positrons Channeling along the Si[100] Direction 40-50 GeV正电子沿Si[100]方向通道的横向能级统计分析
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700734
V. V. Syshchenko, A. I. Tarnovsky, A. Yu. Isupov
{"title":"Statistical Analysis of Transverse Energy Levels of 40–50 GeV Positrons Channeling along the Si[100] Direction","authors":"V. V. Syshchenko,&nbsp;A. I. Tarnovsky,&nbsp;A. Yu. Isupov","doi":"10.1134/S1027451026700734","DOIUrl":"10.1134/S1027451026700734","url":null,"abstract":"<p>The motion of charged particles in a crystal can be either regular or chaotic. At the quantum level, chaotic behavior manifests in the statistical properties of an ensemble of energy levels. Systems in which regions of regular motion in phase space are separated by a domain of dynamical chaos are of particular interest. The level statistics in such systems are strongly influenced by the possibility of tunneling between dynamically isolated regions of phase space. Accounting for this effect leads to the Podolsky–Narimanov distribution function. This article presents an analysis of the dynamics of transverse motion of high-energy positrons (40–50 GeV) channeling along the [100] direction of a silicon crystal. The parameters of the Podolsky–Narimanov distribution are determined. It is shown that the Podolsky–Narimanov distribution describes the statistics of nearest-neighbor energy level spacings of transverse motion more accurately than known alternatives.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"315 - 319"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Features of the Action of a High-Power Ion Beam of Nanosecond Duration on an AlN Thin Piezoelectric Film 纳秒级高功率离子束对AlN压电薄膜的作用特性
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700746
V. S. Kovivchak
{"title":"Features of the Action of a High-Power Ion Beam of Nanosecond Duration on an AlN Thin Piezoelectric Film","authors":"V. S. Kovivchak","doi":"10.1134/S1027451026700746","DOIUrl":"10.1134/S1027451026700746","url":null,"abstract":"<p>The destruction and change of elemental composition of surface layers of an AlN thin film deposited by reactive magnetron sputtering on a glass ceramic substrate (including metal sublayer) under the influence of high-power ion beam of nanosecond duration have been investigated. The spatial characteristics of the surface destruction of the film have been determined. Cracking of the film, as well as partial or complete removal of fragments of film destruction, is observed depending on the beam current density. The effect of a high-power ion beam on the systems AlN thin film‒Al thin film‒glass ceramic and Al thin film‒AlN thin film‒Al thin film‒glass ceramic was considered. The formation of aluminum droplets on the surface of glass ceramic in the areas of the removed Al film, as well as on the surface of fragments of AlN film destruction at a single irradiation with a high-power ion beam with current density up to 150 A/cm<sup>2</sup> was found. The depletion of the surface layer of the film by nitrogen was established. Possible mechanisms for the observed changes in the surface layer of AlN thin film are discussed.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"320 - 324"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical Model of Atom Ejection from the Ni (111) Surface in an Asymmetric Direction Relative to the Lens Center Ni(111)表面相对透镜中心非对称方向原子喷射的解析模型
IF 0.4
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2026-08-16 DOI: 10.1134/S1027451026700783
A. I. Musin, V. N. Samoilov, P. V. Aristarkhov
{"title":"Analytical Model of Atom Ejection from the Ni (111) Surface in an Asymmetric Direction Relative to the Lens Center","authors":"A. I. Musin,&nbsp;V. N. Samoilov,&nbsp;P. V. Aristarkhov","doi":"10.1134/S1027451026700783","DOIUrl":"10.1134/S1027451026700783","url":null,"abstract":"<p>The paper proposes an analytical model of atom ejection during sputtering from the surface of a Ni (111) single crystal in an asymmetric direction relative to the center of the lens consisting of two nearest surface atoms. The interaction of atoms is described using the hard-sphere approximation with a diameter dependent on the initial energy of the ejected atom. Criteria are obtained that allow one to determine the number of collisions with lens atoms (0, 1, or 2), as well as analytical expressions for the energy, polar and azimuthal angles of an atom after collisions, including after crossing a plane potential barrier. The results demonstrate that the polar angle blocking effect and the azimuthal angle focusing and overfocusing effects significantly affect the formation of angular and energy distributions of sputtered atoms.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"20 2","pages":"347 - 355"},"PeriodicalIF":0.4,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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