Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques最新文献_第10页

Determination of the Ion–Solid Interaction Potential from Experiment and Its Effect on the Profiles of Implanted Particles 通过实验确定离子-固体相互作用势及其对植入粒子轮廓的影响

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700265

A. N. Zinoviev, P. Yu. Babenko, V. S. Mikhailov, D. S. Tensin

引用次数: 0

Electrical Strength of Polymer Film with Randomly Distributed Air Inclusions 带有随机分布空气夹杂物的聚合物薄膜的电强度

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700332

Yu. P. Virchenko, Amanuel Mehari Tewolde

引用次数: 0

Small-Angle Scattering Investigation of Colloidal Suspensions with Lamellar Ba Hexaferrite Nanoparticles 含有片状六铁钡纳米颗粒的胶体悬浮液的小角散射研究

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700393

M. Balasoiu, S. Lysenko, S. Astaf’eva, D. Yakusheva, E. Kornilitsina, O. Ivankov, A. Kuklin, O. M. Bunoiu, N. Lupu

引用次数: 0

Investigation of Plasticity in Memristive Structures Based on Nd2 – xCexCuO4 – y Epitaxial Films 基于 Nd2 - xCexCuO4 - y 磊晶薄膜的膜塑性结构研究

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700022

N. A. Tulina, A. N. Rossolenko, I. M. Shmytko, I. Yu. Borisenko, A. A. Ivanov

{"title":"Investigation of Plasticity in Memristive Structures Based on Nd2 – xCexCuO4 – y Epitaxial Films","authors":"N. A. Tulina, A. N. Rossolenko, I. M. Shmytko, I. Yu. Borisenko, A. A. Ivanov","doi":"10.1134/S1027451024700022","DOIUrl":"10.1134/S1027451024700022","url":null,"abstract":"Pulse investigations of resistive switching in planar memristive heterocontacts based on Nd2 – xC-exCuO4 – y epitaxial films are presented. The possibility of regulating metastable resistive states in planar memristive systems based on such films is studied using specific protocols of pulse measurements. Various metastable states are implemented by changing external parameters: the frequency and magnitude of the electric-field voltage applied to the heterocontacts. Dynamic effects are investigated, and the transition times between metastable states are determined. Direct investigation involves alteration of the electrodynamic properties under the effect of a sinusoidal alternating electric field at frequencies of 10–3 Hz and in the pulsed mode with pulse durations ranging from 0.1 ms to 25 s. This is accomplished by measuring the current–voltage characteristics, recording the current and voltage oscillograms at the heterocontact, and examining the temperature-dependent resistivity of metastable phases. The multilevel nature of the metastable resistive states in the studied systems and the ability to control switching times characterize the adaptability of these devices and their potential use as memory elements for neuromorphic applications in spiking neural networks.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 3","pages":"512 - 518"},"PeriodicalIF":0.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141718827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Two-Dimensional Pyroelectric Material with Heat-Transfer Modulation 具有传热调制功能的二维热释电材料

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S102745102470006X

A. M. Pugachev, A. A. Sokolov, I. O. Akhundov, N. V. Protasevich

{"title":"Two-Dimensional Pyroelectric Material with Heat-Transfer Modulation","authors":"A. M. Pugachev, A. A. Sokolov, I. O. Akhundov, N. V. Protasevich","doi":"10.1134/S102745102470006X","DOIUrl":"10.1134/S102745102470006X","url":null,"abstract":"Strontium barium niobate SrxBa1 – xNb2O6 films, grown by plasma sputtering on layers of indium tin oxide and platinum on silicon and sapphire substrates, are investigated. Such materials are used in pyroelectric electro-optical converters of a new generation. A two orders of magnitude higher sensitivity to temperature change is detected in some of the investigated films compared to crystalline SrxBa1 – xNb2O6, the pyroelectric coefficient of which is γ ~ 6 × 10−4 C/m2 K. The observed phenomenon is explained by the emergence of mobile elements in the “substrate–bottom electrode–ferroelectric–top electrode” system when the top electrode is detached from the ferroelectric. Leakage currents are unevenly distributed across the surface, often concentrated at local points or areas that can be considered one dimensional. It is known that the boundaries of ferroelectric domain walls exhibit abnormally high conductivity. In contrast to a tightly pressed electrode, where charge leakage may occur through it, in this structure, all the charge resulting from the change in spontaneous polarization during heating is transferred to the external circuit. This process occurs because the leakage-current points are local, and in the absence of a pressed electrode, the current flows along the surface.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 3","pages":"536 - 541"},"PeriodicalIF":0.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141718874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation of the Electrical Parameters of Microarc Oxide Coatings Using the Matrix-Operator Method 使用矩阵-操作器法模拟微弧氧化涂层的电气参数

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700095

E. A. Pecherskaya, S. V. Konovalov, A. D. Semenov, P. E. Golubkov, S. A. Gurin, M. D. Novichkov

{"title":"Simulation of the Electrical Parameters of Microarc Oxide Coatings Using the Matrix-Operator Method","authors":"E. A. Pecherskaya, S. V. Konovalov, A. D. Semenov, P. E. Golubkov, S. A. Gurin, M. D. Novichkov","doi":"10.1134/S1027451024700095","DOIUrl":"10.1134/S1027451024700095","url":null,"abstract":"The work addresses the issues of controllability of the microarc-oxidation process. This problem is mostly due to the difficulty of analytically characterizing the heterogeneous physical–chemical processes, which are nonlinear and nonstationary, that take place during microarc oxidation. To tackle this issue, a digital twin of the process is being developed, within which an analytical model is proposed to describe the behavior of the equivalent electrical circuit of the galvanic cell during coating deposition. The proposed analytical model of the process is nonlinear and nonstationary, which is attributed to the abrupt decrease in the active resistance of the coating during dielectric breakdowns. Based on experimentally obtained current and voltage oscillograms and the proposed analytical model, parametric identification of the electrical parameters of oxide coatings is performed using the matrix-operator method on the orthonormal Walsh basis. The matrix-operator method is selected because of its applicability to solving problems with both linear and nonlinear equations, as well as stationary and nonstationary parameters and variables, along with the relative simplicity of the mathematical and algorithmic implementation of computations. The calculations result in weight functions of the electrical model of the microarc-oxidation process, reflecting the relationship between the voltage and current in the galvanic cell (coating conductivity). The mean values of the weight functions (average conductivity) decrease during coating deposition, which confirms the adequacy of the proposed model and enables its use for implementing real-time procedures for monitoring coating properties. The scientific novelty of the work lies in the possibility of the real-time control of microarc oxidation through parametric identification of the electrical parameters of coatings using the matrix-operator method.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 3","pages":"551 - 556"},"PeriodicalIF":0.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141718877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low Dissipative State of Bi2Se3 and Bi2Te3 Surfaces Bi2Se3 和 Bi2Te3 表面的低耗散状态

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700125

S. Sh. Gahramanov, Y. A. Abdullayev, H. V. Orujova, A. A. Badalov, N. A. Abdullayev

{"title":"Low Dissipative State of Bi2Se3 and Bi2Te3 Surfaces","authors":"S. Sh. Gahramanov, Y. A. Abdullayev, H. V. Orujova, A. A. Badalov, N. A. Abdullayev","doi":"10.1134/S1027451024700125","DOIUrl":"10.1134/S1027451024700125","url":null,"abstract":"The morphology of the (0001) surface is studied using a scanning probe microscope, and the effect of electrolytic deposition of potassium ions on the surface properties of layered Bi2Se3 and Bi2Te3 crystals is investigated by modulation electroreflectance spectroscopy. The process of prolonged deposition of potassium atoms onto the (0001) surface of Bi2Se3 and Bi2Te3 crystals after adsorption causes their intercalation into van der Waals spaces of the quintets closest to the surface. Surface metallization with potassium and broadening of van der Waals gaps in the near-surface region during intercalation due to an increase in the barrier height lead to a weakening of interlayer interaction, a decrease in the overlap of wave functions of different layers, and a weakening of dispersion. As a result of electrodeposition, potassium intercalates into the interlayer spaces. This entails modification of the surface accompanied by an increase in the concentration of charge carriers and their mobility, which implies a transition of the near-surface region to a metallic state with lower dissipation.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 3","pages":"573 - 578"},"PeriodicalIF":0.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141718754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing 离子注入和退火后绝缘体上硅层的复杂诊断方法

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700149

P. A. Yunin, M. N. Drozdov, A. V. Novikov, V. B. Shmagin, E. V. Demidov, A. N. Mikhailov, D. I. Tetelbaum, A. I. Belov

{"title":"Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing","authors":"P. A. Yunin, M. N. Drozdov, A. V. Novikov, V. B. Shmagin, E. V. Demidov, A. N. Mikhailov, D. I. Tetelbaum, A. I. Belov","doi":"10.1134/S1027451024700149","DOIUrl":"10.1134/S1027451024700149","url":null,"abstract":"A technology was developed for activating ion-implanted dopants in silicon-on-insulator layers at a low annealing temperature (600°C) using the pre-amorphization technique of a silicon device layer. In the case of phosphorus implantation, silicon was amorphized directly by dopant ions. In the case of boron implantation for pre-amorphization, the layers were preliminary irradiated with argon or fluorine ions. Complex diagnostics of the implanted layers was carried out using secondary ion mass spectrometry, X-ray diffractometry, and small-angle X-ray reflectometry. The combination of methods made it possible to characterize the impurity distribution, the degree of silicon crystallinity, the layer thicknesses, and the interface widths in structures. The results of diagnostics of the structure and composition correlate well with calculations in the SRIM software package and the electrophysical characteristics of the layers after annealing. It was shown that the use of argon for pre-amorphization of silicon interfered with the recrystallization process and did not make it possible to achieve acceptable electrical characteristics of the doped layer. Amorphization with phosphorus and pre-amorphization with fluorine during boron implantation allowed obtaining the required values of the resistance of the doped layers after annealing at a temperature of 600°C. The use of a complex approach rendered it possible to optimize the modes of amorphization, ion doping, and annealing of silicon-on-insulator structures at low temperatures necessary for the creation of light-emitting device structures based on silicon-germanium nanoislands.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 3","pages":"586 - 593"},"PeriodicalIF":0.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141718756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Mechanisms of Strengthening Aluminum Foils Consolidated by the High-Pressure-Torsion Technique 通过高压扭转技术加固铝箔的机制

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700216

E. A. Sviridova, S. V. Vasiliev, A. I. Limanovskii, V. N. Varyukhin, V. I. Tkatch

引用次数: 0

Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide 温度对碳化硅中快速重离子轨道形成的影响建模

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-07-15 DOI: 10.1134/S1027451024700319

D. I. Zainutdinov, R. A. Voronkov, S. A. Gorbunov, N. Medvedev, R. A. Rymzhanov, M. V. Sorokin, A. E. Volkov

{"title":"Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide","authors":"D. I. Zainutdinov, R. A. Voronkov, S. A. Gorbunov, N. Medvedev, R. A. Rymzhanov, M. V. Sorokin, A. E. Volkov","doi":"10.1134/S1027451024700319","DOIUrl":"10.1134/S1027451024700319","url":null,"abstract":"A hybrid multiscale model consisting of two coupled modules is used to study the effect of irradiation temperature on the kinetics of the formation of swift heavy ions tracks in silicon carbide (6H-SiC). Excitation of the electronic and atomic subsystems of the material is simulated using the Monte Carlo TREKIS-3 code. The profile of energy transferred to the atomic lattice is used as the initial conditions for molecular-dynamics simulations (using the LAMMPS package) of structural changes in the material near the trajectory of the swift heavy ion. Using the example of Bi-ion irradiation with an energy of 710 MeV, it is found that increasing irradiation temperature leads to an increase in the energy density transferred to the lattice. This induces rapid disordering of the core structure of the track at timescales on the order of 0.25 ps. At irradiation temperatures below 1800 K, subsequent recrystallization of the amorphous region within the cooling track leads to complete restoration of the material structure. At temperatures above the threshold of 1800 K, mass transfer, determined by the ejection of dislocations from the track core, results in the formation of nanoscale voids with a diameter of approximately 3 nm along the ion trajectory. The simulation results are useful for assessing the radiation resistance of silicon carbide under extreme irradiation conditions and for formulating ideas and designing new experiments on high-temperature SiC irradiation.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 3","pages":"683 - 689"},"PeriodicalIF":0.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141718781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0