I. I. Amirov, N. V. Alov, P. Yu. Sharanov, T. V. Rakhimova
{"title":"在低离子能量氧等离子体中氧化和蚀刻钌薄膜","authors":"I. I. Amirov, N. V. Alov, P. Yu. Sharanov, T. V. Rakhimova","doi":"10.1134/S1027451024701258","DOIUrl":null,"url":null,"abstract":"<p>It has been established by X-ray photoelectron spectroscopy that the oxidation of thin ruthenium films in oxygen plasma with the addition of 5% inert gases (Ar or Kr) occurs to form an oxide layer of RuO<sub>2</sub>. With an increase in ion energy from 20 to 140 eV, the oxygen content in the near-surface layer was found to increase from 60 to 70 at %. The Ru etching rate also increased several times. Such a symbate dependence is explained by the fact that ion bombardment of the surface stimulates not only the removal of weakly bound metal oxides on the surface but also accelerates their formation on the surface. The limiting stage of etching is the removal of low-volatile metal oxides. The shift of the Ru3<i>d</i> doublet peaks, the change in their relative intensity depending on the ion energy, and the presence of an oxygen-enriched layer on the RuO<sub>2</sub> surface indicate that RuO<sub>3</sub> oxide can be formed on the surface during plasma treatment.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 6","pages":"1359 - 1363"},"PeriodicalIF":0.5000,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Oxidation and Etching of Thin Ruthenium Films in Low Ion Energy Oxygen Plasma\",\"authors\":\"I. I. Amirov, N. V. Alov, P. Yu. Sharanov, T. V. Rakhimova\",\"doi\":\"10.1134/S1027451024701258\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>It has been established by X-ray photoelectron spectroscopy that the oxidation of thin ruthenium films in oxygen plasma with the addition of 5% inert gases (Ar or Kr) occurs to form an oxide layer of RuO<sub>2</sub>. With an increase in ion energy from 20 to 140 eV, the oxygen content in the near-surface layer was found to increase from 60 to 70 at %. The Ru etching rate also increased several times. Such a symbate dependence is explained by the fact that ion bombardment of the surface stimulates not only the removal of weakly bound metal oxides on the surface but also accelerates their formation on the surface. The limiting stage of etching is the removal of low-volatile metal oxides. The shift of the Ru3<i>d</i> doublet peaks, the change in their relative intensity depending on the ion energy, and the presence of an oxygen-enriched layer on the RuO<sub>2</sub> surface indicate that RuO<sub>3</sub> oxide can be formed on the surface during plasma treatment.</p>\",\"PeriodicalId\":671,\"journal\":{\"name\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"volume\":\"18 6\",\"pages\":\"1359 - 1363\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2025-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1027451024701258\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1027451024701258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Oxidation and Etching of Thin Ruthenium Films in Low Ion Energy Oxygen Plasma
It has been established by X-ray photoelectron spectroscopy that the oxidation of thin ruthenium films in oxygen plasma with the addition of 5% inert gases (Ar or Kr) occurs to form an oxide layer of RuO2. With an increase in ion energy from 20 to 140 eV, the oxygen content in the near-surface layer was found to increase from 60 to 70 at %. The Ru etching rate also increased several times. Such a symbate dependence is explained by the fact that ion bombardment of the surface stimulates not only the removal of weakly bound metal oxides on the surface but also accelerates their formation on the surface. The limiting stage of etching is the removal of low-volatile metal oxides. The shift of the Ru3d doublet peaks, the change in their relative intensity depending on the ion energy, and the presence of an oxygen-enriched layer on the RuO2 surface indicate that RuO3 oxide can be formed on the surface during plasma treatment.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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