Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques最新文献_第3页

Evaluation of the Component Composition and Thickness of the Modified Layer of Tungsten and Tantalum Carbides during Stationary Sputtering by Helium Ions Bombardment 评估氦离子轰击固定溅射过程中钨和钽碳化物改性层的成分组成和厚度

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024700885

V. V. Manukhin

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Gradient Structure Formation during Crystallization of Deformed Al87Ni6Nd7 Amorphous Alloy

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024701088

P. A. Uzhakin, V. V. Chirkova, N. A. Volkov, G. E. Abrosimova

{"title":"Gradient Structure Formation during Crystallization of Deformed Al87Ni6Nd7 Amorphous Alloy","authors":"P. A. Uzhakin, V. V. Chirkova, N. A. Volkov, G. E. Abrosimova","doi":"10.1134/S1027451024701088","DOIUrl":"10.1134/S1027451024701088","url":null,"abstract":"The influence of plastic deformation on the formation of nanocrystals in the Al87Ni6Nd7 amorphous alloy was studied using X-ray diffraction analysis. It has been shown that the preliminary deformation of the amorphous alloy accelerates the crystallization of the amorphous phase and can lead to the formation of smaller nanocrystals compared to heat treatment. The size of nanocrystals and their number depend on the treatment conditions of the amorphous phase: when preliminary deformation is used, the size of nanocrystals formed during annealing is smaller than that in an undeformed sample and the proportion of nanocrystals is slightly higher. In samples subjected to preliminary deformation by rolling, a gradient structure is formed: the proportion of nanocrystals decreases with distance from the surface into the depth of the sample. The size of nanocrystals changes slightly with changing distance from the sample surface. The results show that preliminary plastic deformation can be an effective method to obtain a nanocrystalline structure with different proportion and sizes of nanocrystals in the amorphous phase. This is important for creating highly functional materials with outstanding physicochemical properties. The results obtained significantly expand the existing understanding of the mechanisms of formation of nanocrystals in the amorphous phase under external influences.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 5","pages":"1243 - 1248"},"PeriodicalIF":0.5,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142845102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Structure and Magnetic Properties of Multilayer Nanosystems Based on Thin Films of Cobalt and Chromium-Group Metals Deposited by Magnetron Sputtering 基于磁控溅射沉积的钴和铬族金属薄膜的多层纳米系统的结构和磁性能

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024701015

A. V. Prokaznikov, V. A. Paporkov, R. V. Selyukov, S. V. Vasilev, O. V. Savenko

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Registration Method of Secondary Electron Spectra and Experimental Studies of the Electronic Structure of Atoms of Steel X17AG18 and ZrC Ceramics

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024701027

I. A. Shulepov, E. S. Mirovaya, A. A. Neiman, S. P. Buyakova, L. B. Botaeva

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Enhancing Microhardness and Corrosion Resistance of Anodic Oxides Grown on Hypoeutectic Al–Si Alloys Pretreated by Low-Energy High-Current Electron Beams 提高用低能量大电流电子束预处理的次共晶铝硅合金上生长的阳极氧化物的显微硬度和耐腐蚀性能

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024700940

A. Lucchini Huspek, B. Akdogan, Yu. H. Akhmadeev, E. A. Petrikova, Yu. F. Ivanov, P. V. Moskvin, N. N. Koval, M. Bestetti

{"title":"Enhancing Microhardness and Corrosion Resistance of Anodic Oxides Grown on Hypoeutectic Al–Si Alloys Pretreated by Low-Energy High-Current Electron Beams","authors":"A. Lucchini Huspek, B. Akdogan, Yu. H. Akhmadeev, E. A. Petrikova, Yu. F. Ivanov, P. V. Moskvin, N. N. Koval, M. Bestetti","doi":"10.1134/S1027451024700940","DOIUrl":"10.1134/S1027451024700940","url":null,"abstract":"Anodic oxidation is widely employed in industry to impart high mechanical properties and improve the corrosion resistance of Al–Si alloys. However, compared to pure Al, the high content of Si prevents the growth of a uniform anodic layer, leading to the formation of cracks and porosities within the oxide. In the present work, low-energy high-current electron beam is used as pretreatment of a hypoeutectic Al–Si alloy to enhance the properties of the anodic oxide. Electron beam modified samples showed a fine and homogenous dispersion of Si in the α-matrix, together with a content reduction of Si in the treated layer. Hard anodic oxides grown on electron beam pre-treated alloys exhibited a higher microhardness, increased by 65%, and a lower corrosion current density, decreased by 94%. Cross-sectional SEM morphology and EDX elemental maps showed less defective anodic oxides, in contrast with oxide formed on as-cast hypoeutectic Al–Si alloys.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 5","pages":"1135 - 1145"},"PeriodicalIF":0.5,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Atomic Molecular Representations of Erbium Powders Annealed by Thermal Doping of Porous Silicon 多孔硅热掺杂退火铒粉的原子分子表征

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024700952

E. H. Khamzin, S. A. Nefedov, D. N. Artemyev, N. V. Latukhina

{"title":"Atomic Molecular Representations of Erbium Powders Annealed by Thermal Doping of Porous Silicon","authors":"E. H. Khamzin, S. A. Nefedov, D. N. Artemyev, N. V. Latukhina","doi":"10.1134/S1027451024700952","DOIUrl":"10.1134/S1027451024700952","url":null,"abstract":"This paper presents an atomic-molecular and topological description of widely used in the semiconductor and material construction industries erbium compounds obtained by temperature annealing during doping of porous silicon samples. The samples were instilled with an aqueous-alcoholic solution of erbium pentahydrate. The heat treatment lasted 30 minutes at an annealing temperature of 950°C. The obtained two powder phases of erbium were analyzed experimentally and theoretically. Decoded X-ray diffraction and Raman spectroscopy data of erbium powders are presented. The crystal-chemical approach has been applied to the topological analysis of the free space in sesquioxide and pentahydrate structures. The phase change in the chemical bond structure of annealed erbium compound led to changes in its optical and electrical properties. The main results of the study illustrate the importance of the stage of temperature doping with erbium ions of nanocrystalline structures of porous silicon and similar other dielectric materials for optoelectronic and photonic advances.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 5","pages":"1146 - 1154"},"PeriodicalIF":0.5,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Structure and Properties of TiN–Cu Composite Coatings on T15K6 Alloy Obtained by Vacuum-Arc Evaporation and Magnetron Sputtering 通过真空-电弧蒸发和磁控溅射获得的 T15K6 合金 TiN-Cu 复合涂层的结构与性能

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024700915

D. B.-D. Tsyrenov, A. P. Semenov, I. A. Semenova, N. S. Ulahanov

引用次数: 0

Structural Changes of the K-208 Glass Surface after Proton Irradiation of Different Intensity

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S102745102470099X

R. H. Khasanshin, L. S. Novikov

{"title":"Structural Changes of the K-208 Glass Surface after Proton Irradiation of Different Intensity","authors":"R. H. Khasanshin, L. S. Novikov","doi":"10.1134/S102745102470099X","DOIUrl":"10.1134/S102745102470099X","url":null,"abstract":"Changes in the structure of the surface of K-208 glass irradiated in vacuum (10–4 Pa) by protons with energies of 30 keV have been studied. It has been established that the nature of the changes depends on the proton flux density (φр). At φр < 3.0 × 1010 cm–2 s–1, the changes are mainly associated with the emergence of percolation channels on the irradiated surface. Percolation channels during proton irradiation of glass are formed as a result of migration of Na+ ions in the field of the charge injected into the glass. As φр increases, the formation of gas-filled bubbles begins to play a significant role. The appearance of bubbles is due to the fact that the field migration of Na+ ions is accompanied by the release of nonbridge oxygen atoms, which provided electrical neutrality in the vicinity of the localization of these ions. At values of φ > 2 × 1011 cm–2 s–1, gas-filled bubbles and sodium microarrays form and grow in pairs. The authors believe that under these irradiation conditions the accelerated field migration of sodium ions through the percolation channel ensures intensive release of nonbridge oxygen atoms in its vicinity, followed by their migration and the formation of gas-filled bubbles.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 5","pages":"1173 - 1178"},"PeriodicalIF":0.5,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142845057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Study of Silicon Dioxide Sputtering by a Focused Gallium Ion Beam

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024701039

O. V. Podorozhniy, A. V. Rumyantsev, R. L. Volkov, N. I. Borgardt

{"title":"Study of Silicon Dioxide Sputtering by a Focused Gallium Ion Beam","authors":"O. V. Podorozhniy, A. V. Rumyantsev, R. L. Volkov, N. I. Borgardt","doi":"10.1134/S1027451024701039","DOIUrl":"10.1134/S1027451024701039","url":null,"abstract":"Test structures in the form of rectangular boxes fabricated on thermal silicon dioxide substrates under normal and oblique ion bombardment using the focused ion beam technique were studied by transmission electron microscopy and energy-dispersive X-ray microanalysis. The experimentally obtained depth distribution profiles for gallium atoms, as well as the sputtering yields, were compared with the results of Monte Carlo simulations. Calculations were carried out using standard continuous and discrete-continuous variation models for the surface binding energy of atoms in silicon dioxide. For the normal incidence of the ion beam, based on minimizing the value of the R-factor, which characterizes the agreement between the calculated and experimental data, the optimal values of the parameters of the discrete-continuous variation model were found, which turned out to be close to the values used in the continuous model. It is shown that the obtained parameters make it possible to simulate silicon dioxide sputtering with acceptable accuracy at ion beam incidence angles of 15° and 30°. However, at a grazing incidence angle of 80°, significant differences arise between the experimental and calculated profiles of the concentration of gallium atoms implanted in silicon dioxide.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 5","pages":"1209 - 1215"},"PeriodicalIF":0.5,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142845104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Features of Ohmic Contact with an Ion-Induced p-GaAs Nanolayer

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Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-12-18 DOI: 10.1134/S1027451024700988

V. M. Mikoushkin, E. A. Markova, D. A. Novikov

{"title":"Features of Ohmic Contact with an Ion-Induced p-GaAs Nanolayer","authors":"V. M. Mikoushkin, E. A. Markova, D. A. Novikov","doi":"10.1134/S1027451024700988","DOIUrl":"10.1134/S1027451024700988","url":null,"abstract":"The properties of a metal contact with a p-GaAs layer ~8 nm thick induced by low-energy Ar+ ions on an n-GaAs wafer as a result of the conduction type conversion have been studied. The metal was deposited according to the standard technology on the surface of the semiconductor p-GaAs with a natural oxide layer partially restored when the sample was transferred to a deposition setup. To prevent metallization of the nanolayer the contact was not annealed. Therefore, a Schottky barrier emerged at the interface and a residual oxide layer retained. However, current–voltage characteristics showed that the formed contact is predominantly ohmic. It has been found that a high concentration of ion-induced defects radically reduces the width of the Schottky barrier and ensures the tunneling of holes and electrons of the semiconductor valence band through the barrier in the forward and reverse directions, respectively. It has been shown that ion bombardment of the p-GaAs semiconductor surface makes it possible to obtain an ohmic contact with any metal without annealing. It is concluded that the ion-stimulated modification of the semiconductor and the exclusion of annealing make it possible to obtain a tunnel ohmic contact with an extremely thin p-GaAs nanolayer coated with the residual layer of natural oxide.","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 5","pages":"1167 - 1172"},"PeriodicalIF":0.5,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142845112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0