2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第7页

Evaluation and applications of 600V/650V enhancement-mode GaN devices 600V/650V增强型GaN器件的评价与应用

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369318

Xiucheng Huang, Tao Liu, Bin Li, F. Lee, Qiang Li

引用次数: 41

Two year reliability validation of GaN power semiconductors in low voltage power electronics applications GaN功率半导体在低压电力电子应用中的两年可靠性验证

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369268

Benjamin K. Rhea, Luke L. Jenkins, Frank T. Werner, William E. Abell, R. Dean

引用次数: 9

Performance evaluation of series connected 1700V SiC MOSFET devices 串联1700V SiC MOSFET器件的性能评价

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369327

K. Vechalapu, S. Bhattacharya, Eddy Aleoiza

{"title":"Performance evaluation of series connected 1700V SiC MOSFET devices","authors":"K. Vechalapu, S. Bhattacharya, Eddy Aleoiza","doi":"10.1109/WIPDA.2015.7369327","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369327","url":null,"abstract":"The low voltage SiC (Silicon carbide) MOSFET (1.2 kV to 1.7 kV) increases the switching frequency limits of a power electronic converter several folds compared to low voltage Si IGBTs. Significant increase in efficiency and power density of voltage source converters can be achieved. However, for medium-voltage high-power converter applications Silicon (Si) devices (4.5 kV and 6.5 kV IGBT) are still dominant. To explore the capability of low voltage SiC devices for medium or high voltage applications, series connection of 1.7 kV/300 A SiC MOSFET modules has been investigated in this paper. A simple RC snubber method has been used for dynamic voltage sharing to offset the turn-off delays due to mismatch on device's characteristics and/or gate signals. Experimental switching characterization with different values of RC snubbers have been carried out to find the optimal RC snubber which gives minimum voltage sharing difference, snubber losses and total semiconductor losses. This paper also intends to show an optimization of the RC snubber for series connection of a limited number of 1.7kV SiC MOSFETs for 6 kV dc bus and for a generalized dc bus voltage.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"61 1","pages":"184-191"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89026204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 60

Channel mobility and threshold voltage characterization of 4H-SiC MOSFET with antimony channel implantation 掺杂锑沟道的4H-SiC MOSFET的沟道迁移率和阈值电压特性

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369270

Yongju Zheng, T. Isaacs-smith, A. Ahyi, S. Dhar, P. Mooney

引用次数: 3

A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application 应用于1.2kV的氮化镓CAVET直流和开关性能的讨论

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369308

D. Ji, S. Chowdhury

{"title":"A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application","authors":"D. Ji, S. Chowdhury","doi":"10.1109/WIPDA.2015.7369308","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369308","url":null,"abstract":"A cascoded GaN Current Aperture Vertical Electron Transistor (CAVET), which incorporates a normally off low-voltage Si MOSFET at the input and a normally on high-voltage GaN CAVET at the output in a cascode form, has been simulated and analyzed using a device/circuit hybrid simulator implemented in Silvaco ATLAS. The hybrid simulator was achieved by integrating the Silvaco ATLAS based 2D drift-diffusion simulator with the SPICE based circuit simulator. This model provides a reliable method of evaluating GaN-based power transistor. A baseline of the hybrid simulator was first established using commercial cascoded GaN HEMT where a good agreement of simulated data and device specs as published on the datasheet was obtained. The hybrid simulator was then applied to compare SiC and GaN power devices using commercial MOSFET and JFET for SiC and a CAVET in GaN. A cascoded GaN CAVET has 2x faster switching time, 6x lower switching loss than standard commercial SiC MOSFET and JFET, suggesting its potential advantage over SiC devices for power converters. Another advantage of cascoded GaN CAVET is that it enables switches operating at frequencies of several hundreds of kilohertz with low power loss, which enable smaller converter size and high system efficiency.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"574 1","pages":"174-179"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81511911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Development of software to design passive filters for EMI suppression in SiC DC fed motor drives 开发用于SiC直流电机驱动中抑制电磁干扰的无源滤波器设计软件

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369320

B. Narayanasamy, Hussam Jalanbo, F. Luo

引用次数: 6

A SiC 8 Bit DAC at 400°C

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369325

A. Rahman, S. Roy, R. Murphree, H. Mantooth, A. M. Francis, J. Holmes

引用次数: 16

Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT 单片集成准常关栅极驱动器和600 V GaN-on-Si HEMT

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369264

S. Moench, M. Costa, A. Barner, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher

引用次数: 25

Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching 集成SiC MOSFET模块，具有超低寄生电感，用于无噪声超高速开关

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369296

Liqi Zhang, Suxuan Guo, Xuan Li, Yang Lei, Wensong Yu, A. Huang

引用次数: 37

Switching and robustness analysis of 10 kV SiC BJTs 10kv SiC BJTs的开关及鲁棒性分析

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369317

R. Singh, Stoyan Jeliazkov, B. Grummel, S. Sundaresan

{"title":"Switching and robustness analysis of 10 kV SiC BJTs","authors":"R. Singh, Stoyan Jeliazkov, B. Grummel, S. Sundaresan","doi":"10.1109/WIPDA.2015.7369317","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369317","url":null,"abstract":"Collector-Emiter blocking voltages of 10.5 kV (91% of theoretical avalanche limit and 125 V/μm), on-resistance of 110 mΩ-cm2, which is close to the unipolar limit of 94 mΩ-cm2, and current gain as high as 75 are measured on 10 kV SiC BJTs. Monolithic Darlington-connected BJTs fabricated on the same wafer yield current gains as high as 3400, and show Si BJT-like output characteristics in the saturation region and a distinct quasi-saturation region. Switching measurements performed at a DC link voltage of 5 kV and collector current of 8 A feature a collector current rise time as low as 30 ns during turn-on and collector voltage recovery time as low as 100 ns during turn-off. Very low turn-on and turn-off switching energies of 4.2 mJ and 1.6 mJ, respectively, are extracted from the switching transients, which are 19 and 25 times smaller than the corresponding switching energies reported on 6.5 kV Si IGBTs. When turned-on to a short-circuited load at a collector bias of 4500 V, the 10 kV BJT shows a temperature-invariant, withstand time in excess of 20 μs. Leakage currents <; 1μA (system limit) are measured, even after 234 hours of operation under a DC collector bias of 5000 V at elevated temperatures.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"2012 1","pages":"406-409"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73961148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4