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2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献

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Activation energy of frequency-dependent drain-conductance of AlGaN/GaN HEMT evaluated with low frequency S-parameters 用低频s参数评价频率相关的AlGaN/GaN HEMT漏导活化能
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369280
A. Wakejima, T. Narita, Y. Katayama, Keiichi Tamesue, T. Egawa
{"title":"Activation energy of frequency-dependent drain-conductance of AlGaN/GaN HEMT evaluated with low frequency S-parameters","authors":"A. Wakejima, T. Narita, Y. Katayama, Keiichi Tamesue, T. Egawa","doi":"10.1109/WIPDA.2015.7369280","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369280","url":null,"abstract":"In this paper, we reveal an activation energy of a frequency-dependent drain conductance in AlGaN/GaN HEMT. Firstly, using two-port vector network characteristics at a low frequency less than MHz, it is confirmed that frequency dependence of a drain conductance (Gd) results in peculiar behavior in S22 of the AlGaN/GaN HEMT. In order to obtain the activation energy of the process of the frequency response of the Gd, we evaluate temperature dependence of a time constant (τ) of the frequency-dependent Gd, which can be obtained by exponential fitting of the Gd. With an Arrhenius plot for the Gd, the activation energy of the process can be estimated to be 0.13 eV. This activation energy is as exactly same as that we obtained from pulsed I-V measurements with which an electron capture process can be evaluated. Therefore, peculiar behavior in S22 we observed in very low frequency two-port network measurements is concluded to result from the electron capture process in the epitaxial layer.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"31 1","pages":"81-84"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76609453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2-Phase 2-stage capacitor-less gate driver for Gallium Nitride Gate Injection Transistor for reduced gate ringing 用于减少栅极振铃的氮化镓栅极注入晶体管的2相2级无电容栅极驱动器
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369259
A. Cai, Arnel C. Herreria, S. B. How, L. Siek
{"title":"2-Phase 2-stage capacitor-less gate driver for Gallium Nitride Gate Injection Transistor for reduced gate ringing","authors":"A. Cai, Arnel C. Herreria, S. B. How, L. Siek","doi":"10.1109/WIPDA.2015.7369259","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369259","url":null,"abstract":"Increasingly stringent requirements for higher power density and efficiency have driven development for lower on-resistance (Ron) and gate charge (Qg) power transistors. Gallium Nitride (GaN) and Silicon Carbide (SiC) are good contenders for replacing conventional Si power transistors. This work attempts to develop a driver IC to fulfil specific needs of Gallium Nitride Gate Injection Transistor (GIT), which is a non-insulated gate enhancement mode GaN power transistor. In order to supply a forward gate current, a two stage driver is a strong contender to resolve this issue. The application of GaN GITs typically target applications where the slew rates are required to be high. High slew rate results in ringing and current clamping at the gate. This project proposes a 2-phase circuit to reduce the gate ringing. Simulation is conducted to verify the design and the proposed design demonstrates reduction in gate ringing.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"210 1","pages":"129-134"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78494226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Operation analysis of digital control based MHz totem-pole PFC with GaN device 基于GaN器件的数字控制MHz图腾柱PFC的运行分析
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369316
Zhengyang Liu, Zhengrong Huang, F. Lee, Qiang Li, Yuchen Yang
{"title":"Operation analysis of digital control based MHz totem-pole PFC with GaN device","authors":"Zhengyang Liu, Zhengrong Huang, F. Lee, Qiang Li, Yuchen Yang","doi":"10.1109/WIPDA.2015.7369316","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369316","url":null,"abstract":"This paper presents an accurate analytical model to calculate the control switch on-time of voltage mode gallium nitride (GaN) devices based MHz critical conduction mode (CRM) power factor correction (PFC) rectifier. The purpose of this model is for digital control implementation of the GaN-based MHz PFC. By making the average input current equal to the sinusoidal reference current in the whole line cycle, the calculated on-time can be applied in voltage-mode-based CRM PFC, to achieve low input current distortion and high power factor. The model considers the resonance between inductor and switch parasitic capacitor, which improves its accuracy at MHz switching frequency range. In addition, this model is applicable when zero-voltage-switching (ZVS) extension is applied.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"27 1","pages":"281-286"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81714279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Floating body effects in carbon doped GaN HEMTs 碳掺杂GaN hemt中的浮体效应
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369271
Martin Kuball, M. Uren, A. Pooth, S. Karboyan, W. M. Waller, I. Chatterjee
{"title":"Floating body effects in carbon doped GaN HEMTs","authors":"Martin Kuball, M. Uren, A. Pooth, S. Karboyan, W. M. Waller, I. Chatterjee","doi":"10.1109/WIPDA.2015.7369271","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369271","url":null,"abstract":"GaN power HEMTs use carbon doped buffers to deliver high breakdown voltage and off-state low leakage; however these devices are highly vulnerable to dynamic dispersion. Carbon doped GaN has its Fermi level pinned 0.9eV above the valence band and in equilibrium would be isolated from the 2DEG by a reverse biased PN junction and hence would be electrically floating. In reality leakage across that junction and charge storage in the compensated deep acceptors controls the buffer potential, the dynamic on-resistance dispersion and the gate-drain breakdown voltage. We discuss experiment and simulation that supports the model that controlling leakage to the floating buffer is critical for power device operation.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"24 1","pages":"70-74"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83257773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simulation of a power package with underfill resin and silicon gel 下填充树脂与硅胶的电源封装模拟
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369265
Hao Zhang, S. Ang
{"title":"Simulation of a power package with underfill resin and silicon gel","authors":"Hao Zhang, S. Ang","doi":"10.1109/WIPDA.2015.7369265","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369265","url":null,"abstract":"This paper investigates the effects of underfill epoxy resin and silicone gel elastomer on packaging induced thermal mechanical stresses for a simplified double-sided cooling power package using finite element method. Visco-elastic and hyper-elastic constitutive models were used to simulate the non-linear material properties. The results were compared to the models with linear elastic material.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"11 1","pages":"396-401"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85305402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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