2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献

Recent developments in GaN-based optical rapid switching semiconductor devices 基于gan的光快速开关半导体器件的最新进展

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-12-30 DOI: 10.1109/WIPDA.2015.7369312

S. Mazumder, J. Leach, K. Udwary, K. Technologies, Xinmei Wang

引用次数: 0

Short circuit robustness of 1200 V SiC switches 1200v SiC开关的短路稳健性

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369309

R. Singh, B. Grummel, S. Sundaresan

引用次数: 13

Characterization and prediction of the avalanche performance of 1.2 kV SiC MOSFETs 1.2 kV SiC mosfet雪崩性能的表征与预测

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369294

C. Dimarino, B. Hull

引用次数: 25

Efficiency optimization for a power factor correction (PFC) rectifier with gallium nitride transistor 氮化镓晶体管功率因数校正整流器的效率优化

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369288

S. Bolte, N. Frohleke, J. Bocker

引用次数: 1

Study of the turn-on of various high-voltage SiC thyristors 各种高压SiC晶闸管的导通研究

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369283

H. O’Brien, A. Ogunniyi, W. Shaheen, S. Ryu

{"title":"Study of the turn-on of various high-voltage SiC thyristors","authors":"H. O’Brien, A. Ogunniyi, W. Shaheen, S. Ryu","doi":"10.1109/WIPDA.2015.7369283","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369283","url":null,"abstract":"This research is focused on characterization of the turn-on transition of high voltage SiC thyristors of different epilayer thicknesses and active area sizes to determine their suitability and limitations in high-dI/dt, fast-switching applications. The unique aspects of this study include the very high current density being switched through the thyristors over a short period of time at initial turn-on, resulting in very high instantaneous dissipated power over the small device volume. The devices that were characterized were 6 kV, 0.5 cm2 super gate turn-off thyristors (SGTOs), 10 kV, 1.05 cm2 SGTOs, and 15 kV, 1.05 cm2 SGTOs, all fabricated by Cree, Inc. for the Army Research Laboratory. The highest dI/dt and current density were 13 kA/microsecond and 3.2 kA/cm2 for a parallel pair of 0.5 cm2 thyristors, with pulse current peaking 250 ns from initial gate trigger. These evaluations help determine tradeoffs between series-stacking two lower-voltage thyristors versus using a single thicker-epi device, or paralleling two small-area devices versus switching one larger device, for fast-switching applications.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"73 1","pages":"5-9"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82876141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Ultra-low inductance phase leg design for GaN-based three-phase motor drive systems 基于氮化镓的三相电机驱动系统的超低电感相腿设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369314

Xuning Zhang, Nidhi Haryani, Zhiyu Shen, R. Burgos, D. Boroyevich

{"title":"Ultra-low inductance phase leg design for GaN-based three-phase motor drive systems","authors":"Xuning Zhang, Nidhi Haryani, Zhiyu Shen, R. Burgos, D. Boroyevich","doi":"10.1109/WIPDA.2015.7369314","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369314","url":null,"abstract":"This paper presents an improved phase leg power loop design for enhance mode lateral structure Gallium Nitride (GaN) transistors. Static characterization results of a 650V/30A GaN transistor are presented. The gate driver circuit is designed based on the characterization results. In order to reduce current commutation loop inductance within the GaN phase leg, an improved power loop design with vertical structure is proposed for lateral structure GaN transistors. The control of Common Mode (CM) noise current propagation is also considered during the gate driver design by optimizing the power distribution and grounding structure of the gate driver and digital control circuits. By differentiating the propagation path impedance of digital control circuits and their power supply circuits, conductive CM noise can propagate through power supply path to protect the digital control circuits. The design is verified through experiments on a phase leg prototype which prove the effectiveness of the proposed phase leg on the overvoltage reduction during current transition along with less cross-coupling between power loop and gate loop compared with conventional lateral power loop design. Finally, a three phase motor drive system is designed and tested based on the proposed phase leg.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"5 1","pages":"119-124"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91469306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17

High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter 基于12 VIN到1 VOUT点负载转换器的高频eGaN单片半桥集成电路

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369282

D. Reusch

引用次数: 7

Design considerations for high power density/efficient PCB embedded inductor 高功率密度/高效PCB嵌入式电感的设计注意事项

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369285

Mehrdad Biglarbegian, Neel Shah, I. Mazhari, B. Parkhideh

{"title":"Design considerations for high power density/efficient PCB embedded inductor","authors":"Mehrdad Biglarbegian, Neel Shah, I. Mazhari, B. Parkhideh","doi":"10.1109/WIPDA.2015.7369285","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369285","url":null,"abstract":"This paper presents the design and implementation of high power density and highly efficient air-core embedded inductor onto Printed Circuit Board (PCB) for 280W-5A/240nH, 280W-12A/150nH and 280W-18A/50nH. The toroidal structure due to its better performance on interfacing electromagnetic fields (EMI), is investigated. In addition, thermal restrictions are considered at high current capacity by reducing the inductor size. This will bring the advantage of lower resistivity and consequently the conduction loss. Other challenges such as temperature rise optimization of high current (18A) on the PCB is also investigated. First, parameter calculation for design consideration of an embedded inductor are presented, then JMAG simulations are used to observe precisely the temperature rise profile distribution in different sections of the inductor. An optimized design to achieve high efficient inductor and simultaneously high power density is proposed and several experiments and accurate designs are shown. The primary results show an acceptable temperature rise for high current (18A) inductor without the heat sink.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"62 1","pages":"247-252"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73828842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17

Methodology to qualify silicon carbide MOSFETs for single shot avalanche events 验证碳化硅mosfet用于单次雪崩事件的方法

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369276

V. Pala, B. Hull, J. Richmond, P. Butler, S. Allen, J. Palmour

引用次数: 11

Understanding switching losses in SiC MOSFET: Toward lossless switching 了解SiC MOSFET的开关损耗:迈向无损开关

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369295

Xuan Li, Liqi Zhang, Suxuan Guo, Yang Lei, A. Huang, Bo Zhang

引用次数: 75