High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter

Abstract

Power converters are constantly trending towards higher efficiency, higher power density, higher switching frequency, and higher output current. Rapidly maturing gallium nitride (GaN) technology can meet these demands, and in this paper high performance 12 VIN to 1 VOUT eGaN monolithic half bridge IC based point-of-load (POL) buck converters will be demonstrated at output currents up to 40 A and switching frequencies up to 4 MHz.