{"title":"基于12 VIN到1 VOUT点负载转换器的高频eGaN单片半桥集成电路","authors":"D. Reusch","doi":"10.1109/WIPDA.2015.7369282","DOIUrl":null,"url":null,"abstract":"Power converters are constantly trending towards higher efficiency, higher power density, higher switching frequency, and higher output current. Rapidly maturing gallium nitride (GaN) technology can meet these demands, and in this paper high performance 12 VIN to 1 VOUT eGaN monolithic half bridge IC based point-of-load (POL) buck converters will be demonstrated at output currents up to 40 A and switching frequencies up to 4 MHz.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"163 4 1","pages":"371-376"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter\",\"authors\":\"D. Reusch\",\"doi\":\"10.1109/WIPDA.2015.7369282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power converters are constantly trending towards higher efficiency, higher power density, higher switching frequency, and higher output current. Rapidly maturing gallium nitride (GaN) technology can meet these demands, and in this paper high performance 12 VIN to 1 VOUT eGaN monolithic half bridge IC based point-of-load (POL) buck converters will be demonstrated at output currents up to 40 A and switching frequencies up to 4 MHz.\",\"PeriodicalId\":6538,\"journal\":{\"name\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"163 4 1\",\"pages\":\"371-376\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2015.7369282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter
Power converters are constantly trending towards higher efficiency, higher power density, higher switching frequency, and higher output current. Rapidly maturing gallium nitride (GaN) technology can meet these demands, and in this paper high performance 12 VIN to 1 VOUT eGaN monolithic half bridge IC based point-of-load (POL) buck converters will be demonstrated at output currents up to 40 A and switching frequencies up to 4 MHz.
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