V. Pala, B. Hull, J. Richmond, P. Butler, S. Allen, J. Palmour
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引用次数: 11
摘要
本文提出了一种建立和确定雪崩应力下碳化硅功率器件安全工作边界的方法。该方法包括使用统计方法来估计雪崩安全操作区域，并确保雪崩应力后设备可靠性不会降低。我们还展示了C3M 900V SiC mosfet的雪崩能力，通过采用这种方法，它已经完全符合雪崩坚固性。
Methodology to qualify silicon carbide MOSFETs for single shot avalanche events
This paper presents a methodology to establish and qualify safe bounds of operation for Silicon Carbide power devices under avalanche stress. The methodology involves using a statistical method to estimate an avalanche safe operating area, and by ensuring that device reliability is not degraded after avalanche stress. We also demonstrate the avalanche capability of the C3M 900V SiC MOSFETs, which have been fully qualified for avalanche ruggedness by employing this methodology.
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