2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第2页

Wide bandgap semiconductor power devices for energy efficient systems 用于节能系统的宽带隙半导体功率器件

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369328

T. Chow

引用次数: 69

Power switching transistors based on GaN and AlGaN channels 基于GaN和AlGaN通道的功率开关晶体管

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369292

S. Bajaj, Ting‐Hsiang Hung, F. Akyol, S. Krishnamoorthy, Sadia Khandaker, A. Armstrong, A. Allerman, S. Rajan

引用次数: 1

Semiconductor-based galvanic isolation 半导体基电流隔离

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369290

Xuan Zhang, He Li, Chengcheng Yao, Jin Wang

{"title":"Semiconductor-based galvanic isolation","authors":"Xuan Zhang, He Li, Chengcheng Yao, Jin Wang","doi":"10.1109/WIPDA.2015.7369290","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369290","url":null,"abstract":"This paper presents the study on the semiconductor-based galvanic isolation. This solution delivers the differential-mode (DM) power via semiconductor power switches during their on states, while sustaining the common-mode (CM) voltage and blocking the CM leakage current with those switches during their off states. While it is impractical to implement this solution with Si devices, the latest SiC devices and the coming vertical GaN devices, however, provide unprecedented properties and thus can potentially enable the practical implementation. An isolated dc/dc converter based on the switched-capacitor circuit is studied as an example. The CM leakage current caused by the line input and the resulted touch current (TC) are quantified and compared to the limits in the safety standard IEC60950. To reduce the TC, low switch output capacitance and low converter switching frequency are needed. Then, discussions are presented on the TC reduction approaches and the design considerations to achieve high power density and high efficiency. A 400-V, 400-W prototype based on 1.7-kV SiC MOSFETs is built to demo the DM power delivery performance and showcase the CM leakage current problem. Further study on the CM leakage current elimination is needed to validate this solution.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"39 7-8","pages":"268-274"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91498884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Design of a silicon-WBG hybrid switch 硅- wbg混合开关的设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369319

A. Deshpande, F. Luo

引用次数: 39

Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules 用于1.7 kV SiC MOSFET电源模块栅极驱动短路保护的高带宽Rogowski电流传感器设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369315

Jun Wang, Zhiyu Shen, R. Burgos, D. Boroyevich

引用次数: 66

Sizing SiC storage inverters for fast grid frequency support 尺寸SiC存储逆变器用于快速电网频率支持

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369262

A. Hoke, K. Bennion, V. Gevorgian, S. Chakraborty, E. Muljadi

{"title":"Sizing SiC storage inverters for fast grid frequency support","authors":"A. Hoke, K. Bennion, V. Gevorgian, S. Chakraborty, E. Muljadi","doi":"10.1109/WIPDA.2015.7369262","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369262","url":null,"abstract":"As wind and solar displace synchronous generators whose inertia stabilizes the AC grid frequency on fast time scales, it has been proposed to use energy storage systems (ESSs) to mitigate frequency transient events. Such events require a rapid surge of power from the ESS, but they occur only rarely. The high temperature tolerance of SiC MOSFETs and diodes presents an opportunity for innovative ESS inverter designs. Herein we investigate a SiC ESS inverter design such that the SiC device ratings are obeyed during mild frequency events but are exceeded during rare, major events, for a potentially more economical inverter design. In support of this proposal we present: 1. An analysis of four years of grid frequency events in the U.S. Western Interconnection. 2. A switch-level ESS inverter simulation using SiC devices with detailed loss estimates. 3. Thermal analysis of the SiC power modules during a worst-case frequency event, showing that the modules can likely withstand the brief overcurrent. This analysis supports the conclusion that it may be advantageous for economical designs (acknowledging the increased risks) to undersize the SiC switches when designing inverters to perform active power control for grid frequency support. Such a strategy may result in SiC-based designs being more competitive with less costly silicon IGBT-based designs.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"3 1","pages":"328-333"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76728929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor 22kv碳化硅发射极关断(ETO)晶闸管的导通能力

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369275

Lin Liang, A. Huang, Woongje Sung, Meng-Chia Lee, Xiaoqing Song, Chang Peng, Lin Cheng, J. Palmour, C. Scozzie

引用次数: 2

Cross conduction analysis for enhancement-mode 650-V GaN HFETs in a phase-leg topology 增强模式650-V GaN hfet相腿拓扑的交叉导通分析

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369256

E. Jones, Fred Wang, D. Costinett, Zheyu Zhang, Ben Guo

引用次数: 48

Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch 基于6500V非对称SiC NPNP晶闸管的电流开关性能评价与表征

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369324

A. De, S. Bhattacharya, R. Singh

引用次数: 3

A novel charge based SPICE model for nonlinear device capacitances 基于电荷的非线性器件电容SPICE模型

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369263

T. Heckel, L. Frey

引用次数: 8