2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第2页

Wide bandgap semiconductor power devices for energy efficient systems 用于节能系统的宽带隙半导体功率器件

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369328

T. Chow

引用次数: 69

Power switching transistors based on GaN and AlGaN channels 基于GaN和AlGaN通道的功率开关晶体管

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369292

S. Bajaj, Ting‐Hsiang Hung, F. Akyol, S. Krishnamoorthy, Sadia Khandaker, A. Armstrong, A. Allerman, S. Rajan

引用次数: 1

Semiconductor-based galvanic isolation 半导体基电流隔离

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369290

Xuan Zhang, He Li, Chengcheng Yao, Jin Wang

{"title":"Semiconductor-based galvanic isolation","authors":"Xuan Zhang, He Li, Chengcheng Yao, Jin Wang","doi":"10.1109/WIPDA.2015.7369290","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369290","url":null,"abstract":"This paper presents the study on the semiconductor-based galvanic isolation. This solution delivers the differential-mode (DM) power via semiconductor power switches during their on states, while sustaining the common-mode (CM) voltage and blocking the CM leakage current with those switches during their off states. While it is impractical to implement this solution with Si devices, the latest SiC devices and the coming vertical GaN devices, however, provide unprecedented properties and thus can potentially enable the practical implementation. An isolated dc/dc converter based on the switched-capacitor circuit is studied as an example. The CM leakage current caused by the line input and the resulted touch current (TC) are quantified and compared to the limits in the safety standard IEC60950. To reduce the TC, low switch output capacitance and low converter switching frequency are needed. Then, discussions are presented on the TC reduction approaches and the design considerations to achieve high power density and high efficiency. A 400-V, 400-W prototype based on 1.7-kV SiC MOSFETs is built to demo the DM power delivery performance and showcase the CM leakage current problem. Further study on the CM leakage current elimination is needed to validate this solution.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"39 7-8","pages":"268-274"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91498884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Design of a silicon-WBG hybrid switch 硅- wbg混合开关的设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369319

A. Deshpande, F. Luo

引用次数: 39

Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch 基于6500V非对称SiC NPNP晶闸管的电流开关性能评价与表征

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369324

A. De, S. Bhattacharya, R. Singh

引用次数: 3

Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT 高电压GaN-on-Si肖特基势垒二极管(SBD)的热特性，用于设计功率HEMT的片上热关断电路

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369293

D. Risbud, K. Pedrotti, M. Power, J. Pomeroy, Martin Kuball

{"title":"Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT","authors":"D. Risbud, K. Pedrotti, M. Power, J. Pomeroy, Martin Kuball","doi":"10.1109/WIPDA.2015.7369293","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369293","url":null,"abstract":"Thermal characterization of large multi-finger AlGaN/GaN Schottky Barrier Diodes (SBDs) fabricated on GaN-on-Si high voltage power substrates is reported. An accurate thermal model was developed for the device structure to estimate the device temperature near the 2-DEG in HEMT switches for various power densities. Raman thermography and infrared imaging were used under DC bias conditions for temperature measurement and mapping of heat distribution in the devices. Temperature rise vs. power density, and temperature rise vs. device area are presented. The assumption of uniform temperature distribution throughout the channel holds well for smaller power devices typically used in microwave and RF circuits. However, for the substantially larger high voltage power diodes and HEMTs used in automotive, power conversion and motor drive applications, the temperature distribution is not homogeneous from the center of the die to the outer edge. Detailed knowledge of the temperature distribution across the die is essential for system level thermal management. Thermal simulation, characterization results and the temperature coefficient of the sense SBD are used to design a novel self-protecting thermal shutdown circuit integrated with a discrete 600V power HEMT.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"43 1","pages":"156-161"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89762897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

A novel charge based SPICE model for nonlinear device capacitances 基于电荷的非线性器件电容SPICE模型

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369263

T. Heckel, L. Frey

引用次数: 8

Package influence on the simulated performance of 1.2 kV SiC modules 封装对1.2 kV SiC模块模拟性能的影响

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369301

Zichen Miao, Yincan Mao, K. Ngo, Woochan Kim

引用次数: 9

Cross conduction analysis for enhancement-mode 650-V GaN HFETs in a phase-leg topology 增强模式650-V GaN hfet相腿拓扑的交叉导通分析

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369256

E. Jones, Fred Wang, D. Costinett, Zheyu Zhang, Ben Guo

引用次数: 48

Assessment of PSpice model for commercial SiC MOSFET power modules 商用SiC MOSFET功率模块的PSpice模型评估

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369257

D. Johannesson, M. Nawaz

{"title":"Assessment of PSpice model for commercial SiC MOSFET power modules","authors":"D. Johannesson, M. Nawaz","doi":"10.1109/WIPDA.2015.7369257","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369257","url":null,"abstract":"In this paper, a circuit level simulation model for SiC MOSFET power modules has been assessed. The static and dynamic characteristics of a 1.2 kV 800 A SiC MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. The SiC MOSFET power module is evaluated in two case studies, first where the power module is treated as a single device (simulated with one sub-module) and secondly where the performance of the power module is simulated as multiple MOSFET chips in parallel (multiple sub-modules). Here, the bond-wires between the chips are also included as inductive elements. The simulated static characteristics of the SiC MOSFET power module are well aligned with the measured data. In the first case, the simulation model in PSpice shows accurate dynamic performance overall, with exceptions from high-frequency oscillations that arises during turn-on and turn-off. The second case study shows that the oscillations can be captured by introducing multiple MOSFET chips in parallel and where the bond-wires in between are represented by inductors. A slight increase of high-frequency oscillations is noticed but on the cost of reduced simulation robustness (e.g. convergence issues) due to a more complex simulation circuit. Finally, it is concluded that the simulation model performance is overall accurate, both for static and dynamic performance. Further, the model is capable to estimate on-state loss and switching loss in a satisfactory manner and is utilized to evaluate and optimize power electronic converter cell parameters, for instance stray inductance, gate resistance and temperature, and their impact on converter energy loss.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"3 1","pages":"291-295"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85280158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5