2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第3页

Assessment of PSpice model for commercial SiC MOSFET power modules 商用SiC MOSFET功率模块的PSpice模型评估

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369257

D. Johannesson, M. Nawaz

{"title":"Assessment of PSpice model for commercial SiC MOSFET power modules","authors":"D. Johannesson, M. Nawaz","doi":"10.1109/WIPDA.2015.7369257","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369257","url":null,"abstract":"In this paper, a circuit level simulation model for SiC MOSFET power modules has been assessed. The static and dynamic characteristics of a 1.2 kV 800 A SiC MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. The SiC MOSFET power module is evaluated in two case studies, first where the power module is treated as a single device (simulated with one sub-module) and secondly where the performance of the power module is simulated as multiple MOSFET chips in parallel (multiple sub-modules). Here, the bond-wires between the chips are also included as inductive elements. The simulated static characteristics of the SiC MOSFET power module are well aligned with the measured data. In the first case, the simulation model in PSpice shows accurate dynamic performance overall, with exceptions from high-frequency oscillations that arises during turn-on and turn-off. The second case study shows that the oscillations can be captured by introducing multiple MOSFET chips in parallel and where the bond-wires in between are represented by inductors. A slight increase of high-frequency oscillations is noticed but on the cost of reduced simulation robustness (e.g. convergence issues) due to a more complex simulation circuit. Finally, it is concluded that the simulation model performance is overall accurate, both for static and dynamic performance. Further, the model is capable to estimate on-state loss and switching loss in a satisfactory manner and is utilized to evaluate and optimize power electronic converter cell parameters, for instance stray inductance, gate resistance and temperature, and their impact on converter energy loss.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"3 1","pages":"291-295"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85280158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Package influence on the simulated performance of 1.2 kV SiC modules 封装对1.2 kV SiC模块模拟性能的影响

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369301

Zichen Miao, Yincan Mao, K. Ngo, Woochan Kim

引用次数: 9

An E-mode GaN HEMTs based three-level bidirectional DC/DC converter used in Robert Bosch DC-grid system 基于e型GaN hemt的三电平双向DC/DC变换器应用于Robert Bosch直流电网系统

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369254

Juncheng Lu, Hua Bai, S. Averitt, Di Chen, J. Styles

引用次数: 18

An optimized gate-loop layout for multi-chip SiC MOSFET power modules 一种优化的多片SiC MOSFET功率模块的门环布局

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369279

Miao Wang, F. Luo, Longya Xu

引用次数: 4

Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT 高电压GaN-on-Si肖特基势垒二极管(SBD)的热特性，用于设计功率HEMT的片上热关断电路

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369293

D. Risbud, K. Pedrotti, M. Power, J. Pomeroy, Martin Kuball

{"title":"Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT","authors":"D. Risbud, K. Pedrotti, M. Power, J. Pomeroy, Martin Kuball","doi":"10.1109/WIPDA.2015.7369293","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369293","url":null,"abstract":"Thermal characterization of large multi-finger AlGaN/GaN Schottky Barrier Diodes (SBDs) fabricated on GaN-on-Si high voltage power substrates is reported. An accurate thermal model was developed for the device structure to estimate the device temperature near the 2-DEG in HEMT switches for various power densities. Raman thermography and infrared imaging were used under DC bias conditions for temperature measurement and mapping of heat distribution in the devices. Temperature rise vs. power density, and temperature rise vs. device area are presented. The assumption of uniform temperature distribution throughout the channel holds well for smaller power devices typically used in microwave and RF circuits. However, for the substantially larger high voltage power diodes and HEMTs used in automotive, power conversion and motor drive applications, the temperature distribution is not homogeneous from the center of the die to the outer edge. Detailed knowledge of the temperature distribution across the die is essential for system level thermal management. Thermal simulation, characterization results and the temperature coefficient of the sense SBD are used to design a novel self-protecting thermal shutdown circuit integrated with a discrete 600V power HEMT.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"43 1","pages":"156-161"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89762897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Design of a high-density, diode-less 1.2 kV, 90 A SiC MOSFET half-bridge power module 高密度、无二极管1.2 kV、90a SiC MOSFET半桥功率模块的设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369278

C. Dimarino, Wenli Zhang, R. Burgos, D. Boroyevich

引用次数: 9

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application 一种新型的AlGaN/GaN功率HFET，采用部分深沟槽排水结构

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369277

I. Ji, Bongmook Lee, Sizhen Wang, V. Misra, A. Huang

引用次数: 1

Design of GaN transistor-based class E DC-DC converter with resonant rectifier circuit 基于GaN晶体管谐振整流电路的E类DC-DC变换器设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369269

Kyung-Hwan Lee, Euihoon Chung, Gab-Su Seo, Jung-Ik Ha

{"title":"Design of GaN transistor-based class E DC-DC converter with resonant rectifier circuit","authors":"Kyung-Hwan Lee, Euihoon Chung, Gab-Su Seo, Jung-Ik Ha","doi":"10.1109/WIPDA.2015.7369269","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369269","url":null,"abstract":"This paper proposes a novel design of class E dc-dc converter with a resonant rectifier circuit. Class E converter is advantageous in several-MHz switching since it achieves zero voltage switching (ZVS) and has the single ground-referenced switch. In this paper, the resonant rectifier is used to construct a dc-dc converter in conjunction with the class E inverter instead of the conventional rectifiers such as a half-wave rectifier and a full-wave bridge rectifier. The main benefit of the resonant rectifier is that the rectifier diode turns on and off at low dv/dt, thereby reducing switching loss and noise mainly attributed to the parasitic inductance and capacitance. Here we focus on the analysis and design of the resonant rectifier and analytically find the condition that the rectifier circuit can be seen as a resistor. Compared to other studies, the proposed design of the rectifier requires no large filter inductor. Also, its resonant frequency differs from the fundamental frequency, allowing the rectifier to be resistive. A 6.78-MHz prototype converter is implemented by using an enhancement-mode GaN FET, and experimental results validate the proposed design scheme.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"53 1","pages":"275-280"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90825888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Evaluation of 600 V GaN based gate injection transistors for high temperature and high efficiency applications 600 V GaN基栅注入晶体管的高温高效应用评估

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369300

He Li, Chengcheng Yao, Chaoran Han, J. Brothers, Xuan Zhang, Jin Wang

引用次数: 32

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications 六封装SiC MOSFET和Si IGBT模块在高温半桥结构中并联的实验性能比较

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369260

R. Lund, S. Tiwari, O. Midtgård, Tore Undeland

引用次数: 11