2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第3页

An E-mode GaN HEMTs based three-level bidirectional DC/DC converter used in Robert Bosch DC-grid system 基于e型GaN hemt的三电平双向DC/DC变换器应用于Robert Bosch直流电网系统

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369254

Juncheng Lu, Hua Bai, S. Averitt, Di Chen, J. Styles

引用次数: 18

Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor 22kv碳化硅发射极关断(ETO)晶闸管的导通能力

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369275

Lin Liang, A. Huang, Woongje Sung, Meng-Chia Lee, Xiaoqing Song, Chang Peng, Lin Cheng, J. Palmour, C. Scozzie

引用次数: 2

Sizing SiC storage inverters for fast grid frequency support 尺寸SiC存储逆变器用于快速电网频率支持

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369262

A. Hoke, K. Bennion, V. Gevorgian, S. Chakraborty, E. Muljadi

{"title":"Sizing SiC storage inverters for fast grid frequency support","authors":"A. Hoke, K. Bennion, V. Gevorgian, S. Chakraborty, E. Muljadi","doi":"10.1109/WIPDA.2015.7369262","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369262","url":null,"abstract":"As wind and solar displace synchronous generators whose inertia stabilizes the AC grid frequency on fast time scales, it has been proposed to use energy storage systems (ESSs) to mitigate frequency transient events. Such events require a rapid surge of power from the ESS, but they occur only rarely. The high temperature tolerance of SiC MOSFETs and diodes presents an opportunity for innovative ESS inverter designs. Herein we investigate a SiC ESS inverter design such that the SiC device ratings are obeyed during mild frequency events but are exceeded during rare, major events, for a potentially more economical inverter design. In support of this proposal we present: 1. An analysis of four years of grid frequency events in the U.S. Western Interconnection. 2. A switch-level ESS inverter simulation using SiC devices with detailed loss estimates. 3. Thermal analysis of the SiC power modules during a worst-case frequency event, showing that the modules can likely withstand the brief overcurrent. This analysis supports the conclusion that it may be advantageous for economical designs (acknowledging the increased risks) to undersize the SiC switches when designing inverters to perform active power control for grid frequency support. Such a strategy may result in SiC-based designs being more competitive with less costly silicon IGBT-based designs.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"3 1","pages":"328-333"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76728929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules 用于1.7 kV SiC MOSFET电源模块栅极驱动短路保护的高带宽Rogowski电流传感器设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369315

Jun Wang, Zhiyu Shen, R. Burgos, D. Boroyevich

引用次数: 66

An optimized gate-loop layout for multi-chip SiC MOSFET power modules 一种优化的多片SiC MOSFET功率模块的门环布局

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369279

Miao Wang, F. Luo, Longya Xu

引用次数: 4

Design of a high-density, diode-less 1.2 kV, 90 A SiC MOSFET half-bridge power module 高密度、无二极管1.2 kV、90a SiC MOSFET半桥功率模块的设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369278

C. Dimarino, Wenli Zhang, R. Burgos, D. Boroyevich

引用次数: 9

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application 一种新型的AlGaN/GaN功率HFET，采用部分深沟槽排水结构

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369277

I. Ji, Bongmook Lee, Sizhen Wang, V. Misra, A. Huang

引用次数: 1

Design of GaN transistor-based class E DC-DC converter with resonant rectifier circuit 基于GaN晶体管谐振整流电路的E类DC-DC变换器设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369269

Kyung-Hwan Lee, Euihoon Chung, Gab-Su Seo, Jung-Ik Ha

{"title":"Design of GaN transistor-based class E DC-DC converter with resonant rectifier circuit","authors":"Kyung-Hwan Lee, Euihoon Chung, Gab-Su Seo, Jung-Ik Ha","doi":"10.1109/WIPDA.2015.7369269","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369269","url":null,"abstract":"This paper proposes a novel design of class E dc-dc converter with a resonant rectifier circuit. Class E converter is advantageous in several-MHz switching since it achieves zero voltage switching (ZVS) and has the single ground-referenced switch. In this paper, the resonant rectifier is used to construct a dc-dc converter in conjunction with the class E inverter instead of the conventional rectifiers such as a half-wave rectifier and a full-wave bridge rectifier. The main benefit of the resonant rectifier is that the rectifier diode turns on and off at low dv/dt, thereby reducing switching loss and noise mainly attributed to the parasitic inductance and capacitance. Here we focus on the analysis and design of the resonant rectifier and analytically find the condition that the rectifier circuit can be seen as a resistor. Compared to other studies, the proposed design of the rectifier requires no large filter inductor. Also, its resonant frequency differs from the fundamental frequency, allowing the rectifier to be resistive. A 6.78-MHz prototype converter is implemented by using an enhancement-mode GaN FET, and experimental results validate the proposed design scheme.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"53 1","pages":"275-280"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90825888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Evaluation of 600 V GaN based gate injection transistors for high temperature and high efficiency applications 600 V GaN基栅注入晶体管的高温高效应用评估

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369300

He Li, Chengcheng Yao, Chaoran Han, J. Brothers, Xuan Zhang, Jin Wang

引用次数: 32

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications 六封装SiC MOSFET和Si IGBT模块在高温半桥结构中并联的实验性能比较

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369260

R. Lund, S. Tiwari, O. Midtgård, Tore Undeland

引用次数: 11