Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Abstract

The switching performance of a six-pack SiC MOSFET module (CCS050M12CM2) is investigated experimentally using a standard double pulse test method. The upper three and the lower three MOSFETs of the CCS050M12CM2 are paralleled forming a half-bridge configuration. Moreover, the performance comparison of the CCS050M12CM2 is carried out with a pin to pin compatible Si IGBT module (FS75R12KT4_B15) of the same rating. Thus, switching and driving energy losses can be compared fairly. Laboratory results show that CCS050M12CM2 switches much faster compared to FS75R12KT4_B15 provided the same gate resistor is used. The measured total driving and switching energy losses are approximately 4 times in FS75R12KT4_B15 compared to CCS050M12CM2 at 25 °C. Moreover, the total switching energy loss is nearly independent of the temperature for CCS050M12CM2, whereas, FS75R12KT4_B15 has 1.6 times higher switching energy loss at a junction temperature of 175° C compared to 25 °C.