Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI:10.1109/WIPDA.2015.7369315

Jun Wang, Zhiyu Shen, R. Burgos, D. Boroyevich

引用次数: 66

Abstract

This presents a PCB-based Rogowski current sensor design for the purpose of shortcircuit protection for 1.7 kV SiC MOSFET modules. Firstly, the paper shows that using the DeSat protection method for SiC MOSFET protection is not as effective as that in conventional IGBT applications. Therefore, a direct measurement of device switching current is proposed to achieve shortcircuit protection. The Rogowski-coil-based current sensor is selected among several high-bandwidth candidates for its better overall performance. Then the PCB-based Rogowski coil and its signal processing circuit design are shown in the paper. Finally, experimental results validate that the designed sensor has good performance in both accuracy and bandwidth when compared to a commercial Rogowki probe.

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用于1.7 kV SiC MOSFET电源模块栅极驱动短路保护的高带宽Rogowski电流传感器设计

本文提出了一种基于pcb的Rogowski电流传感器设计，用于1.7 kV SiC MOSFET模块的短路保护。首先，本文表明，采用DeSat保护方法对SiC MOSFET进行保护不如在传统IGBT应用中有效。因此，提出了一种直接测量器件开关电流的方法来实现短路保护。基于rogowski线圈的电流传感器因其更好的整体性能而被选择在几个高带宽候选产品中。然后介绍了基于pcb的Rogowski线圈及其信号处理电路的设计。实验结果表明，与商用Rogowki探针相比，所设计的传感器在精度和带宽方面都具有良好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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