2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第4页

Realization of high speed switching of SiC power devices in voltage source converters 电压源变换器中SiC功率器件高速开关的实现

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369272

Zheyu Zhang, Fred Wang, L. Tolbert, B. Blalock, D. Costinett

{"title":"Realization of high speed switching of SiC power devices in voltage source converters","authors":"Zheyu Zhang, Fred Wang, L. Tolbert, B. Blalock, D. Costinett","doi":"10.1109/WIPDA.2015.7369272","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369272","url":null,"abstract":"Four factors impact high speed switching of silicon carbide (SiC) devices in voltage source converters, including limited gate driving capability, cross-talk, parasitics associated in switching loop, and parasitics of inductive load. This paper focuses on a solution to mitigate the adverse impact of the aforementioned factors. First, an intelligent gate drive is developed for gate driving capability enhancement and cross-talk suppression. Second, placement and layout design of power devices, gate drive, and power stage board are proposed to minimize parasitics for fast switching and over-voltage mitigation. Third, an auxiliary filter is designed to mitigate the negative impact of inductive load's parasitics during the switching transient. Finally, by utilizing all techniques developed above, a three-phase voltage source inverter with Cree 1200-V/20-A SiC MOSFETs is established. Test results show that the switching behavior of SiC devices in actual three-phase voltage source inverter fed motor drives can mostly repeat the switching performance tested by the optimally-designed double pulse test.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"5 1","pages":"28-33"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87942039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Reliability and failure analysis of Cu-Sn transient liquid phase sintered (TLPS) joints under power cycling loads 功率循环载荷作用下Cu-Sn瞬态液相烧结(TLPS)接头可靠性及失效分析

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369306

S. A. Moeini, Hannes Greve, F. McCluskey

{"title":"Reliability and failure analysis of Cu-Sn transient liquid phase sintered (TLPS) joints under power cycling loads","authors":"S. A. Moeini, Hannes Greve, F. McCluskey","doi":"10.1109/WIPDA.2015.7369306","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369306","url":null,"abstract":"The continuous increase in application temperatures of power electronic devices demands new packaging technologies capable of working reliably at high temperatures. Most critical among these new packaging technologies is the need for a new kind of interconnection due to the expanding ban on application of currently used lead containing solders in electronics. In this paper, the performance of a potential interconnect technology (TLPS) with low processing and high application temperatures is investigated under power cycling loading conditions. A test setup compatible with power packages was designed and assembled for this study. This test setup cycles and continuously monitors the temperature of power packages fabricated from a commercially available power diode, TLPS joints, and three types of substrates. Devices are cycled under constant current condition until failure. The failure criterion is defined as either an excessive (> 30%) increase in the maximum temperature of the power device or complete electrical failure of the device. The failed samples were destructively analyzed to identify failure modes and mechanisms. Optical Microscopy, Scanning Electron Microscopy (SEM), and Energy Dispersive Spectrometry (EDS) were used to perform a comprehensive failure analysis. The results show that the stiffness of Cu-Sn TLPS joints can result in fracture of the semiconductor device. The prevalent failure mode was diode failure (short-circuit) and fracture of the device under thermo-mechanical loading was identified as the failure mechanism. Finally, the reliability effects of using different substrates were investigated and compared.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"15 1","pages":"383-389"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89992419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Driving and sensing design of an enhancement-mode-GaN phaseleg as a building block 以增强型氮化镓相链为基础的驱动与传感设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369303

Lingxiao Xue, D. Boroyevich, P. Mattavelli

引用次数: 8

Testing of a novel medium voltage impedance measurement unit 一种新型中压阻抗测量装置的测试

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369273

K. Schoder, M. Steurer, F. Bogdan, J. Hauer, J. Langston, D. Boroyevich, R. Burgos, I. Cvetkovic, Zhiyu Shen, C. Dimarino

引用次数: 2

Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 用于功率开关应用的GaN HEMT, MIS-HEMT和p栅极HEMT的可靠性和失效物理:由于深层效应和时间相关击穿现象的寄生效应和退化

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369305

E. Zanoni, M. Meneghini, G. Meneghesso, D. Bisi, I. Rossetto, A. Stocco

引用次数: 28

Influences of DBC metal layout on the reliability of IGBT power modules DBC金属布局对IGBT电源模块可靠性的影响

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369299

Tian Tian, L. Liang, Wei Xin, F. Luo

引用次数: 3

DC ripple current reduction on multilevel, multiport, single-phase DC/AC converter for renewable energy applications 用于可再生能源应用的多电平，多端口，单相DC/AC转换器的直流纹波电流降低

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369284

Mohammed Alsolami, Jin Wang, L. Herrera

引用次数: 8

A high temperature comparator in CMOS SiC 一种CMOS SiC高温比较器

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369323

A. Rahman, K. Addington, M. Barlow, S. Ahmed, H. Mantooth, A. M. Francis

引用次数: 13

Comparative evaluation of 6kV Si and SiC power devices for medium voltage power electronics applications 中压电力电子应用中6kV Si和SiC功率器件的比较评价

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369289

Xiaoqing Song, A. Huang, Xijun Ni, Liqi Zhang

引用次数: 22

Key structure and process for pulsed power switch SiC RSD 脉冲功率开关SiC RSD关键结构与工艺

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369304

L. Liang, Ming Pan, Ludan Zhang, Yuxiong Shu

引用次数: 1