2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第5页

Performance and cost considerations for SiC-based HEV traction inverter systems 基于sic的HEV牵引逆变系统的性能和成本考虑

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369032

M. Su, Chingchi Chen, Shrivatsal Sharma, J. Kikuchi

引用次数: 36

High power density single phase inverter using GaN FETS and active power decoupling for Google little box challenge 高功率密度单相逆变器采用GaN场效应管和有源功率去耦，为谷歌小盒子挑战

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369287

A. Morsy, Michael Bayern, P. Enjeti

引用次数: 5

Advances in SiC-based power conversion for shipboard electrical power systems 船用电力系统中基于sic的功率转换研究进展

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369322

T. Ericsen, R. Raju, R. Burgos, D. Boroyevich, Sharon Beermann-Curtin

{"title":"Advances in SiC-based power conversion for shipboard electrical power systems","authors":"T. Ericsen, R. Raju, R. Burgos, D. Boroyevich, Sharon Beermann-Curtin","doi":"10.1109/WIPDA.2015.7369322","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369322","url":null,"abstract":"This paper presents the evolution, state of the art, and prospective future of Silicon-Carbide (SiC) based power electronics conversion for shipboard electrical power systems. The latter, having fully profited from the integrated power system (IPS) all-electric ship concept, now face the challenge of an ever increasing electrical payload, with enhanced service and advanced sensors and weapon systems that are forecasted to surpass the onboard propulsion power in next generation ships. Power density has accordingly become crucial in this development, and SiC, with its innate high-voltage, high-frequency and high-temperature characteristics, the sought solution. The Office of Naval Research (ONR) together with the Defense Advanced Research Projects Agency (DARPA) have accordingly devoted an immense effort towards the development of 10 kV SiC MOSFETs and Junction-barrier-Schottky (JBS) diodes, having successfully demonstrated the capabilities of this technology in several applications thus far. Furthering this effort, ONR is presently directing the development of SiC-based PEBB units for next-generation shipboard systems, embodying the future of this concept. This technological evolution, as well as the challenges set forth by SiC-based power conversion, represent the mainstay of this paper.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"63 1","pages":"341-346"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79504182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

HV GaN reliability and status 高压GaN的可靠性和状态

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369307

S. Khalil, S. Hardikar, S. Sack, E. Persson, M. Imam, T. McDonald

引用次数: 15

6.9-cm Active-area interconnected wafer 4 kV PiN diode pulsed at 55 kA 6.9 cm有源区互连晶片4kv PiN二极管脉冲55ka

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369281

V. Veliadis, M. Snook, S. Woodruff, B. Nechay, H. Heame, C. Lavoie, D. Giorgi, M. Ingram

{"title":"6.9-cm Active-area interconnected wafer 4 kV PiN diode pulsed at 55 kA","authors":"V. Veliadis, M. Snook, S. Woodruff, B. Nechay, H. Heame, C. Lavoie, D. Giorgi, M. Ingram","doi":"10.1109/WIPDA.2015.7369281","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369281","url":null,"abstract":"SiC device area is presently limited by material and processing defects. To meet the large current handling requirements of power conditioning systems, paralleling of a large number of devices is required. This can increase cost and complexity through dicing, soldering, insertion of ballast resistors, and forming multiple wire bonds. Furthermore, paralleling numerous discrete devices increases package volume/weight and reduces power density. To overcome these complexities, seventy nine PiN diodes were interconnected on a three-inch 4H-SiC wafer to form a 6.9-cm2 active-area full wafer diode. The interconnected wafer diode blocked a voltage of 4 kV at an extremely low leakage current density of 0.07 μA/cm2. The wafer diode was subsequently mounted in a \"hockey puck\" package and subjected to high power pulsed testing, wherein initial energy stored in a capacitor bank discharged through the interconnected wafer diode into a resistive load. At a pulsed current density of 8 kA/cm2 and a rise rate of di/dt=1.3 kA/μs, the interconnected wafer diode conducted a peak current of 54.8 kA and dissipated 149 J. The calculated action was 420 kA2-s.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"35 1","pages":"47-50"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74307439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimum gate driver design to reach SiC-MOSFET's full potential — Speeding up to 200 kV/μs 最佳栅极驱动器设计，达到SiC-MOSFET的全部潜力-加速高达200 kV/μs

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369313

Otto Kreutzer, B. Eckardt, M. Maerz

引用次数: 23

Application and reliability analysis of sintered silver preforms for die attachment of wide bandgap devices 烧结银预制件在宽禁带器件模具附件中的应用及可靠性分析

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369326

S. Seal, M. Glover, H. Mantooth

引用次数: 2

A 1 MHz eGaN FET based 4-switch buck-boost converter for automotive applications 1 MHz eGaN FET为基础的4开关降压升压转换器的汽车应用

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369311

Chenhao Nan, Tong Yao, R. Ayyanar

引用次数: 12

Loss analysis of GaN devices in an isolated bidirectional DC-DC converter 隔离型双向DC-DC变换器中GaN器件的损耗分析

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369261

Fei Xue, Ruiyang Yu, Suxuan Guo, Wensong Yu, A. Huang

{"title":"Loss analysis of GaN devices in an isolated bidirectional DC-DC converter","authors":"Fei Xue, Ruiyang Yu, Suxuan Guo, Wensong Yu, A. Huang","doi":"10.1109/WIPDA.2015.7369261","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369261","url":null,"abstract":"GaN devices have emerged as a possible replacement for silicon devices in various power conversion applications and as an enabler of new applications not previously possible. This paper presents a 600V Gallium-Nitride (GaN) device based isolated bidirectional DC-DC converter applied in battery energy storage systems. Apart from the features of low turn-off loss, low output capacitance and low drain-source on-state resistance, the most salient one in our bidirectional DC-DC converter application is the ultra-fast freewheeling \"body diode\" that GaN devices have when compared with Si devices. To distinguish the above mentioned performances of GaN from those of the comparable Si devices, a figure of merit for power devices operating in synchronous rectifying mode is proposed. The converter's operating principle is analyzed in steady state. Switching losses of high voltage and low voltage side switches are simulated based on detailed PSpice models. The converter's safe operation area is extended by using GaN device is explained by calculating the loss in hard switching mode. A thermal simulation is conducted to predict its temperature. Experimental results are presented for a 1 kW, 380-to-12 V prototype DC-DC converter, which demonstrate the validity of the analysis and simulation.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"53 1","pages":"201-205"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72648583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

Gate drive development and empirical analysis of 10 kV SiC MOSFET modules 10kv SiC MOSFET模块栅极驱动开发及实证分析

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369321

A. Lemmon, R. Graves

引用次数: 5