M. Su, Chingchi Chen, Shrivatsal Sharma, J. Kikuchi
{"title":"基于sic的HEV牵引逆变系统的性能和成本考虑","authors":"M. Su, Chingchi Chen, Shrivatsal Sharma, J. Kikuchi","doi":"10.1109/WIPDA.2015.7369032","DOIUrl":null,"url":null,"abstract":"SiC power semiconductors are believed to offer an attractive solution for motor drive application in electrified vehicles in 5~10 years. Newer generations of commercial SiC MOSFETs in the 900~1200V class are significantly improved in energy losses, reliability and price. To analyze the potential impact of SiC technology for HEV inverter systems, performance gain of SiC MOSFETs over existing silicon IGBTs must be quantified, which translates to vehicle-level fuel economy and value for consumers. This study will look into HEV drive-cycle simulation results based on inverters of silicon and SiC switching devices, and evaluate the performance improvement and cost premiums for the newer semiconductor technology. Reliability and qualification criteria of SiC MOSFETs for automotive application will also be discussed.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"247 1","pages":"347-350"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"Performance and cost considerations for SiC-based HEV traction inverter systems\",\"authors\":\"M. Su, Chingchi Chen, Shrivatsal Sharma, J. Kikuchi\",\"doi\":\"10.1109/WIPDA.2015.7369032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiC power semiconductors are believed to offer an attractive solution for motor drive application in electrified vehicles in 5~10 years. Newer generations of commercial SiC MOSFETs in the 900~1200V class are significantly improved in energy losses, reliability and price. To analyze the potential impact of SiC technology for HEV inverter systems, performance gain of SiC MOSFETs over existing silicon IGBTs must be quantified, which translates to vehicle-level fuel economy and value for consumers. This study will look into HEV drive-cycle simulation results based on inverters of silicon and SiC switching devices, and evaluate the performance improvement and cost premiums for the newer semiconductor technology. Reliability and qualification criteria of SiC MOSFETs for automotive application will also be discussed.\",\"PeriodicalId\":6538,\"journal\":{\"name\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"247 1\",\"pages\":\"347-350\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2015.7369032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance and cost considerations for SiC-based HEV traction inverter systems
SiC power semiconductors are believed to offer an attractive solution for motor drive application in electrified vehicles in 5~10 years. Newer generations of commercial SiC MOSFETs in the 900~1200V class are significantly improved in energy losses, reliability and price. To analyze the potential impact of SiC technology for HEV inverter systems, performance gain of SiC MOSFETs over existing silicon IGBTs must be quantified, which translates to vehicle-level fuel economy and value for consumers. This study will look into HEV drive-cycle simulation results based on inverters of silicon and SiC switching devices, and evaluate the performance improvement and cost premiums for the newer semiconductor technology. Reliability and qualification criteria of SiC MOSFETs for automotive application will also be discussed.
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