Gate drive development and empirical analysis of 10 kV SiC MOSFET modules

Abstract

This paper presents detailed characterization of a representative 10 kV SiC MOSFET module of the type recently developed for shipboard power applications; these modules have not been exhaustively described in the literature to-date. The characterization data presented includes forward curves, transfer curves, and capacitance-voltage (CV) curves, as well as estimates of packaging parasitic impedances obtained through frequency-domain analysis. In addition, the design of a high-peak-current gate-drive circuit for transient operation of this module is presented, along with preliminary switching waveforms obtained through double-pulse testing.