2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第6页

6.5kV enhancement mode SiC JFET based power module 基于6.5kV增强模式SiC JFET的功率模块

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369291

J. Hostetler, Xueqing Li, P. Alexandrov, Xing Huang, A. Bhalla, M. Becker, Joseph Colombo, Derrick Dieso, J. Sherbondy

{"title":"6.5kV enhancement mode SiC JFET based power module","authors":"J. Hostetler, Xueqing Li, P. Alexandrov, Xing Huang, A. Bhalla, M. Becker, Joseph Colombo, Derrick Dieso, J. Sherbondy","doi":"10.1109/WIPDA.2015.7369291","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369291","url":null,"abstract":"United Silicon Carbide, Inc. (USCi) has developed a novel low-loss 6.5kV enhancement-mode SiC JFET chipset to address transformerless grid-tie, variable frequency drives (VFD) for industrial motors, heavy vehicle motor traction and other high DC-link voltage applications. The JFET devices demonstrate excellent switching losses, approximately ~20X less than 6.5kV Si-IGBTs. The new JFET devices were packaged along with 6.5kV rated SiC JBS diodes in a half-bridge configuration to form an all-SiC high temperature power module rated at 60A. The module performance parameters vs. temperature were evaluated and are presented. Turn-on and turn-off behavior of the module and the nature of paralleling enhancement-mode JFETs are presented. The power modules were tested in a buck converter where switching a bus voltage of 3.3kV at 10kHz and 15kHz was achieved and module power losses estimated. The fast-switching medium voltage SiC module can have a large impact on reducing system components and targets next generation power conversion systems seeking higher power densities.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"37 1","pages":"300-305"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84087644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

A high efficiency inverter design for Google little box challenge 一个针对谷歌小盒子挑战的高效率逆变器设计

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369302

Lanhua Zhang, Rachael Born, Xiaonan Zhao, J. Lai

引用次数: 51

Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation 利用TCAD模拟研究势垒和钝化氮化应力对AlGaN/GaN HEMT性能的影响

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369266

H. Wong, N. Braga, R. Mickevicius, Jie Liu

引用次数: 3

SiC MOSFETs connected in series with active voltage control 具有主动电压控制的SiC mosfet串联

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369274

P. Palmer, Jin Zhang, Xueqiang Zhang

引用次数: 21

Consideration of flyback converter using GaN devices GaN器件反激变换器的研究

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369255

Liming Liu, J. Puukko, Jing Xu

引用次数: 6

An indirect matrix converter based 97%-efficiency on-board level 2 battery charger using E-mode GaN HEMTs 使用E-mode GaN hemt的间接矩阵变换器的97%效率的车载2级电池充电器

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369258

Juncheng Lu, Qi Tian, K. Bai, Alan Brown, Matt Mcammond

{"title":"An indirect matrix converter based 97%-efficiency on-board level 2 battery charger using E-mode GaN HEMTs","authors":"Juncheng Lu, Qi Tian, K. Bai, Alan Brown, Matt Mcammond","doi":"10.1109/WIPDA.2015.7369258","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369258","url":null,"abstract":"Most of the present EV on-board chargers utilize a three-stage design, e.g., AC/DC rectifier, DC to high-frequency AC inverter, and AC to DC rectifier, which limits the wall-to-battery efficiency to ~94%. Instead of using the regular three-stage design, a matrix converter could directly convert grid AC to high-frequency AC thereby saves one stage and potentially increases the system efficiency, however, the control will be more complex and the high cost of building the back-to-back switches is inevitable. This paper adopts the 650V E-mode GaN HEMTs to build a level-2 on-board charger. The input voltage is 80~260VAC, the battery voltage is 200~500VDC and the rated power is 7.2kW with the bidirectional power-flow capability. Such design saves the bulky DC-bus capacitor. Variable switching frequency is combined with phase-shift control to realize the zero-voltage switching. An active filter is employed to choke the 120Hz output current ripple if needed. To further increase the system efficiency, four GaN HEMTs are paralleled to form one switching module. The overall system efficiency is >97% and the power density is 2.5kW/L with the active filter and 3.3kW/L without the active filter.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"133 1","pages":"351-358"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75031068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 41

3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive 集成超高速栅极驱动的1.2kV SiC MOSFET的3.38 Mhz工作

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369298

Suxuan Guo, Liqi Zhang, Yang Lei, Xuan Li, Fei Xue, Wensong Yu, A. Huang

{"title":"3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive","authors":"Suxuan Guo, Liqi Zhang, Yang Lei, Xuan Li, Fei Xue, Wensong Yu, A. Huang","doi":"10.1109/WIPDA.2015.7369298","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369298","url":null,"abstract":"With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused by the fast switching is a major constrain for improving switching frequency. For this reason, an integrated SiC module with 1.2kV MOSFET and ultra-fast gate drive circuits is proposed and developed. Two 1.2kV SiC MOSFETs bare dies and two high current gate driver chips are integrated in a compact integrated module package to reduce the parasitic inductance. 0Ω gate resistor therefore can be used in this module to improve the device at maximum speed. Noise free operation of the tested module is verified even under extremely high dV/dt and dI/dt conditions. The ultra-low turn-off loss of the module is being demonstrated. Finally, the integrated module is demonstrated in two megahertz converters: an 800W 1.5MHz synchronous boost converter and a 3.38MHz half bridge inverter. The era for high voltage-megahertz switching has arrived.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"411 1","pages":"390-395"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79909681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 44

Using SiC MOSFETs to improve reliability of EV inverters 利用SiC mosfet提高EV逆变器的可靠性

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369267

Hao Zheng, Xubin Wang, Xuemei Wang, L. Ran, Bo Zhang

引用次数: 4

Excess carrier mapping technique — A new parameter extraction method for 4H-SiC ambipolar power devices 过量载流子映射技术——一种新的4H-SiC双极功率器件参数提取方法

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369286

Meng-Chia Lee, Xiaoqing Song, A. Huang

引用次数: 0

An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT GaN HEMT中AlGaN层电荷捕获位分布的提取方法

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI: 10.1109/WIPDA.2015.7369253

T. Baba, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai

引用次数: 0