3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive

Abstract

With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused by the fast switching is a major constrain for improving switching frequency. For this reason, an integrated SiC module with 1.2kV MOSFET and ultra-fast gate drive circuits is proposed and developed. Two 1.2kV SiC MOSFETs bare dies and two high current gate driver chips are integrated in a compact integrated module package to reduce the parasitic inductance. 0Ω gate resistor therefore can be used in this module to improve the device at maximum speed. Noise free operation of the tested module is verified even under extremely high dV/dt and dI/dt conditions. The ultra-low turn-off loss of the module is being demonstrated. Finally, the integrated module is demonstrated in two megahertz converters: an 800W 1.5MHz synchronous boost converter and a 3.38MHz half bridge inverter. The era for high voltage-megahertz switching has arrived.