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引用次数: 5
摘要
本文详细介绍了最近开发的用于船舶电源应用的典型10 kV SiC MOSFET模块的特性;迄今为止，这些模块还没有在文献中得到详尽的描述。所提供的表征数据包括正向曲线、传递曲线和电容电压(CV)曲线，以及通过频域分析获得的封装寄生阻抗估计。此外，还设计了用于该模块暂态工作的峰值电流门驱动电路，并通过双脉冲测试获得了初步的开关波形。
Gate drive development and empirical analysis of 10 kV SiC MOSFET modules
This paper presents detailed characterization of a representative 10 kV SiC MOSFET module of the type recently developed for shipboard power applications; these modules have not been exhaustively described in the literature to-date. The characterization data presented includes forward curves, transfer curves, and capacitance-voltage (CV) curves, as well as estimates of packaging parasitic impedances obtained through frequency-domain analysis. In addition, the design of a high-peak-current gate-drive circuit for transient operation of this module is presented, along with preliminary switching waveforms obtained through double-pulse testing.
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