一种CMOS SiC高温比较器

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2015-11-01 DOI:10.1109/WIPDA.2015.7369323

A. Rahman, K. Addington, M. Barlow, S. Ahmed, H. Mantooth, A. M. Francis

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引用次数: 13

摘要

本文演示了首次报道的CMOS碳化硅高温电压比较器。该比较器采用1.2 μm CMOS SiC工艺设计，并在12 V ~ 15 V电压下进行了测试。轨对轨电压比较器的测试温度高达450°C，上升和下降时间分别为31 ns和22 ns，正负传播延迟分别为108 ns和107 ns。

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A high temperature comparator in CMOS SiC

This paper demonstrates the first reported high temperature voltage comparator in CMOS silicon carbide. The comparator was designed in a 1.2 μm CMOS SiC process and has been tested for a voltage supply of 12 V to 15 V. The rail to rail voltage comparator has been tested up to 450°C with rise and fall times of 31 ns and 22 ns respectively, and positive and negative propagation delays of 108 ns and 107 ns respectively.

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来源期刊

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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