A SiC 8 Bit DAC at 400°C

A. Rahman, S. Roy, R. Murphree, H. Mantooth, A. M. Francis, J. Holmes
{"title":"A SiC 8 Bit DAC at 400°C","authors":"A. Rahman, S. Roy, R. Murphree, H. Mantooth, A. M. Francis, J. Holmes","doi":"10.1109/WIPDA.2015.7369325","DOIUrl":null,"url":null,"abstract":"This paper presents the first operational digital to analog converter at 400°C. The 8 bit R-2R ladder DAC was designed in the Raytheon 1.2 μm CMOS HiTSiC process. The data converter is also the first of its kind in SiC. It has been tested with a supply voltage between 12 V and 15 V, and reference voltages of 5 V to 8 V. At 400°C, the maximum measured differential non linearity (DNL) is 2 LSB (least significant bit) and the integral non linearity is 4.4 LSB.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"40 1","pages":"241-246"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

Abstract

This paper presents the first operational digital to analog converter at 400°C. The 8 bit R-2R ladder DAC was designed in the Raytheon 1.2 μm CMOS HiTSiC process. The data converter is also the first of its kind in SiC. It has been tested with a supply voltage between 12 V and 15 V, and reference voltages of 5 V to 8 V. At 400°C, the maximum measured differential non linearity (DNL) is 2 LSB (least significant bit) and the integral non linearity is 4.4 LSB.
本文介绍了第一个在400°C下工作的数模转换器。8位R-2R梯形DAC采用雷声公司1.2 μm CMOS HiTSiC工艺设计。该数据转换器也是碳化硅领域的首个同类产品。它已经在12 V到15 V的电源电压和5 V到8 V的参考电压之间进行了测试。在400°C时,最大测量差分非线性(DNL)为2 LSB(最低有效位),积分非线性为4.4 LSB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信