Liqi Zhang, Suxuan Guo, Xuan Li, Yang Lei, Wensong Yu, A. Huang
{"title":"集成SiC MOSFET模块，具有超低寄生电感，用于无噪声超高速开关","authors":"Liqi Zhang, Suxuan Guo, Xuan Li, Yang Lei, Wensong Yu, A. Huang","doi":"10.1109/WIPDA.2015.7369296","DOIUrl":null,"url":null,"abstract":"A 1200V SiC MOSFET-gate driver integrated half-bridge (HB) module using direct bonded copper (DBC) substrate is designed and fabricated for noise free high frequency operation. The layout of the integrated module is carefully designed to eliminate the EMI problem under high switching speed. Due to the significantly reduced stray inductance, the external gate driver resistance can be chosen as zero to maximize the switching speed and reduce the switching loss. Double pulse switching of the standard TO-247 and the integrated module are tested to verify noise free operation of the module under high dI/dt and dV/dt conditions. A half bridge inverter utilizing the integrated module is tested at 510 kHz, 800V, 46Apk-pk. Experimental results show the proposed integrated module can be applied for ultra-high frequency applications.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"76 1","pages":"224-229"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":"{\"title\":\"Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching\",\"authors\":\"Liqi Zhang, Suxuan Guo, Xuan Li, Yang Lei, Wensong Yu, A. Huang\",\"doi\":\"10.1109/WIPDA.2015.7369296\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1200V SiC MOSFET-gate driver integrated half-bridge (HB) module using direct bonded copper (DBC) substrate is designed and fabricated for noise free high frequency operation. The layout of the integrated module is carefully designed to eliminate the EMI problem under high switching speed. Due to the significantly reduced stray inductance, the external gate driver resistance can be chosen as zero to maximize the switching speed and reduce the switching loss. Double pulse switching of the standard TO-247 and the integrated module are tested to verify noise free operation of the module under high dI/dt and dV/dt conditions. A half bridge inverter utilizing the integrated module is tested at 510 kHz, 800V, 46Apk-pk. Experimental results show the proposed integrated module can be applied for ultra-high frequency applications.\",\"PeriodicalId\":6538,\"journal\":{\"name\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"76 1\",\"pages\":\"224-229\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"37\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2015.7369296\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 37
摘要
设计和制造了一种采用直接键合铜(DBC)衬底的1200V SiC mosfet栅极驱动器集成半桥(HB)模块，用于无噪声高频工作。集成模块的布局经过精心设计，以消除高开关速度下的电磁干扰问题。由于杂散电感的显著减小，可以选择外部栅极驱动电阻为零，以最大限度地提高开关速度，降低开关损耗。测试了标准to -247和集成模块的双脉冲开关，验证了模块在高dI/dt和dV/dt条件下的无噪声运行。利用集成模块的半桥式逆变器在510 kHz, 800V, 46Apk-pk下进行了测试。实验结果表明，该集成模块可用于超高频应用。
Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching
A 1200V SiC MOSFET-gate driver integrated half-bridge (HB) module using direct bonded copper (DBC) substrate is designed and fabricated for noise free high frequency operation. The layout of the integrated module is carefully designed to eliminate the EMI problem under high switching speed. Due to the significantly reduced stray inductance, the external gate driver resistance can be chosen as zero to maximize the switching speed and reduce the switching loss. Double pulse switching of the standard TO-247 and the integrated module are tested to verify noise free operation of the module under high dI/dt and dV/dt conditions. A half bridge inverter utilizing the integrated module is tested at 510 kHz, 800V, 46Apk-pk. Experimental results show the proposed integrated module can be applied for ultra-high frequency applications.
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