Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching

Abstract

A 1200V SiC MOSFET-gate driver integrated half-bridge (HB) module using direct bonded copper (DBC) substrate is designed and fabricated for noise free high frequency operation. The layout of the integrated module is carefully designed to eliminate the EMI problem under high switching speed. Due to the significantly reduced stray inductance, the external gate driver resistance can be chosen as zero to maximize the switching speed and reduce the switching loss. Double pulse switching of the standard TO-247 and the integrated module are tested to verify noise free operation of the module under high dI/dt and dV/dt conditions. A half bridge inverter utilizing the integrated module is tested at 510 kHz, 800V, 46Apk-pk. Experimental results show the proposed integrated module can be applied for ultra-high frequency applications.