发布求助
文献互助 智能选刊 最新文献

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials最新文献

筛选
英文 中文
Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS n-InP衬底晶格参数变化对InP/InGaAsP-DHS复合材料性能的影响
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147364
A. Knauer, R. Staske, J. Krausslich, R. Kittner
{"title":"Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS","authors":"A. Knauer, R. Staske, J. Krausslich, R. Kittner","doi":"10.1109/ICIPRM.1991.147364","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147364","url":null,"abstract":"Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"99 1","pages":"327-330"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78697533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability issues of InAlAs/InGaAs high-electron-mobility transistors InAlAs/InGaAs高电子迁移率晶体管的可靠性问题
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147388
M. Tutt, G. Ng, D. Pavlidis, J. Mansfield
{"title":"Reliability issues of InAlAs/InGaAs high-electron-mobility transistors","authors":"M. Tutt, G. Ng, D. Pavlidis, J. Mansfield","doi":"10.1109/ICIPRM.1991.147388","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147388","url":null,"abstract":"The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"25 1","pages":"349-352"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83236811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A 1.3 mu m InGaAsP ridge waveguide laser on GaAs and silicon substrates thin-film transfer 1.3 μ m InGaAsP脊波导激光器在砷化镓和硅衬底上的薄膜转移
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147351
C. Shieh, J. Chi, C. Armiento, P. Haugsjaa, A. Negri, M. Rothman, W.I. Wang
{"title":"A 1.3 mu m InGaAsP ridge waveguide laser on GaAs and silicon substrates thin-film transfer","authors":"C. Shieh, J. Chi, C. Armiento, P. Haugsjaa, A. Negri, M. Rothman, W.I. Wang","doi":"10.1109/ICIPRM.1991.147351","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147351","url":null,"abstract":"A technique that makes it possible to transfer semiconductor epitaxial films from a lattice-matched growth substrate to a host substrate of a different material is discussed. The transfer of epitaxial films allows materials with different lattice constants to be bonded together without generating a substantial number of defects in regions that are critical to device operation. The thin-film transfer process utilizes metallic solder as an interface between the transferred semiconductor layers and the host substrate. In this transfer process. the film is rigidly supported at all times during transfer, providing the potential for defect-free large-area films. The fabrication of InGaAsP lasers on both GaAs and Si substrates is described. Measurements of the optical characteristics of the lasers show threshold currents comparable to those of conventional lasers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"11 1","pages":"272-275"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85940811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical characterization of lattice-mismatched In/sub x/Ga/sub 1-x/As photodiode arrays for detection to 1.7 mu m 栅格不匹配In/sub x/Ga/sub 1-x/As光电二极管阵列检测到1.7 μ m的电学特性
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147314
F. Ducroquet, D. Pogány, S. Ababou, G. Guillot, S. Krawczyk, K. Schohe, C. Klingelhofer
{"title":"Electrical characterization of lattice-mismatched In/sub x/Ga/sub 1-x/As photodiode arrays for detection to 1.7 mu m","authors":"F. Ducroquet, D. Pogány, S. Ababou, G. Guillot, S. Krawczyk, K. Schohe, C. Klingelhofer","doi":"10.1109/ICIPRM.1991.147314","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147314","url":null,"abstract":"Lattice mismatched In/sub x/Ga/sub 1-x/As photodiode arrays used for the detection of up to 1.7 mu m in space applications are discussed. The abnormally high reverse current observed on some diodes is interpreted by the electric field assisted generation process. The role of misfit dislocations in the process seems to be important, as established by the correlation between local lowering of photoluminescence signal and the high reverse current. The detection of one deep level on these photodiodes by admittance spectroscopy measurements is described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"142-145"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88617180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Horizontal integration fabrication of a GaAs-on-InP opto-electronic integrated circuit (OEIC) using seeded-mask technology: four channel variable bandwidth optical receiver 采用种子掩膜技术的四通道可变带宽光接收机水平集成制造砷化镓-铟基光电集成电路(OEIC
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147442
P. O'Sullivan, D. Allan, J. Herniman, N. Coyle, R. Young
{"title":"Horizontal integration fabrication of a GaAs-on-InP opto-electronic integrated circuit (OEIC) using seeded-mask technology: four channel variable bandwidth optical receiver","authors":"P. O'Sullivan, D. Allan, J. Herniman, N. Coyle, R. Young","doi":"10.1109/ICIPRM.1991.147442","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147442","url":null,"abstract":"The fabrication of a monolithic GaAs-on-InP, four channel, variable-bandwidth photoreceiver using seeded mask technology is discussed. The method, which is compatible with atmospheric metalorganic vapor-phase epitaxy (MOVPE) growth, may be applied to lattice matched electronics for other optical components. High-frequency data from fully functional OEICs are reported.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"41 1","pages":"575-578"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73732856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics 结构参数对InGaAs/InAlAs 2DEG特性的影响
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147342
M. Tischler, B. D. Parker, M. Goorsky, P. Mooney
{"title":"Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics","authors":"M. Tischler, B. D. Parker, M. Goorsky, P. Mooney","doi":"10.1109/ICIPRM.1991.147342","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147342","url":null,"abstract":"It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"85 1","pages":"224-227"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72704301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion implanted monolithically integrated planar InP/InGaAs/InP:Fe photoreceiver 离子注入单片集成平面InP/InGaAs/InP:Fe光接收器
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147401
D. Rømer, H. Albrecht, L. Hoffmann, J. Walter, G. Ebbinghaus
{"title":"Ion implanted monolithically integrated planar InP/InGaAs/InP:Fe photoreceiver","authors":"D. Rømer, H. Albrecht, L. Hoffmann, J. Walter, G. Ebbinghaus","doi":"10.1109/ICIPRM.1991.147401","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147401","url":null,"abstract":"The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5- mu m gate length have been adjusted with a selective p implantation beneath the channel layer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"6 1","pages":"415-418"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73987336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-frequency InP/InGaAs pin photodiodes with efficient response at short wavelengths 短波响应高效的高频InP/InGaAs引脚光电二极管
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147305
V. Diadiuk, S. Alexander, S. Groves, D. Spears
{"title":"High-frequency InP/InGaAs pin photodiodes with efficient response at short wavelengths","authors":"V. Diadiuk, S. Alexander, S. Groves, D. Spears","doi":"10.1109/ICIPRM.1991.147305","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147305","url":null,"abstract":"It is shown that InP-based pin photodiodes can be operated at high frequency with high quantum efficiency over a broad range of wavelengths (0.6-1.6 mu m). Good window layers for high-speed detectors can be made with n/sup ++/ InP for two reasons: the high carrier concentration enables low sheet resistance to be obtained with very thin layers, and the Burstein-Moss effect significantly reduces the absorption coefficient of the layer in the lambda =0.7-0.9 mu m range. This provides a low-resistance cap layer that is highly transparent over the lambda =0.7-1.6 mu m range and is lattice-matched to the InGaAs(P) active layer. At lambda =0.86 mu m, the detectors demonstrate a flat heterodyne response up to 3 GHz, with 3-dB roll-off of 8 GHz and DC quantum efficiency of approximately 80%. Their current-carrying capability makes them attractive for use in systems that require high local-oscillator power. The detectors are well suited for use with all the semiconductor laser sources available the traditional AlGaAs/GaAs and InP/InGaAsP as well as the new, strained-layer, quantum-well InGaAs/AlGaAs/GaAs and InGaAs/InGaP/GaAs lasers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"41 1","pages":"110-113"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72848818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Implantation damage in InP: thermal stability effects InP的植入损伤:热稳定性效应
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147462
A. Goltzené, B. Meyer, C. Schwab
{"title":"Implantation damage in InP: thermal stability effects","authors":"A. Goltzené, B. Meyer, C. Schwab","doi":"10.1109/ICIPRM.1991.147462","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147462","url":null,"abstract":"The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"97 24 1","pages":"664-667"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78523545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-destructive thickness measurements of GaInAs, AlInAs, and InP multilayer structures GaInAs, AlInAs和InP多层结构的非破坏性厚度测量
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147411
C. Pickering, N.S. Garawal, D. Lancefield, J. Piel, R. Blunt
{"title":"Non-destructive thickness measurements of GaInAs, AlInAs, and InP multilayer structures","authors":"C. Pickering, N.S. Garawal, D. Lancefield, J. Piel, R. Blunt","doi":"10.1109/ICIPRM.1991.147411","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147411","url":null,"abstract":"Thickness measurements of various three and four layer structures on InP substrates using the non-destructive technique of spectroscopic ellipsometry are discussed. The individual layer thicknesses ranged from 150 AA to 4500 AA, and excellent agreement was found between the values obtained from the ellipsometric model and the values obtained on the same samples from conventional destructive thickness measurements (TEM and selective etching). The sensitivity of the spectroscopic ellipsometry modeling procedure to changes in thickness of the various layers is demonstrated and compared to X-ray diffraction modeling of the same layers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"180 1","pages":"456-459"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77336960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信