Horizontal integration fabrication of a GaAs-on-InP opto-electronic integrated circuit (OEIC) using seeded-mask technology: four channel variable bandwidth optical receiver

Abstract

The fabrication of a monolithic GaAs-on-InP, four channel, variable-bandwidth photoreceiver using seeded mask technology is discussed. The method, which is compatible with atmospheric metalorganic vapor-phase epitaxy (MOVPE) growth, may be applied to lattice matched electronics for other optical components. High-frequency data from fully functional OEICs are reported.<>