结构参数对InGaAs/InAlAs 2DEG特性的影响

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147342

M. Tischler, B. D. Parker, M. Goorsky, P. Mooney

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引用次数: 0

摘要

结果表明，在InGaAs/InAlAs 2DEG结构中，不需要超晶格或非常厚的缓冲层来实现高迁移率。然而，当InGaAs通道直接生长在在As通量中加热的InP上时，需要一个InAlAs缓冲层来防止在InGaAs通道的后界面形成片状电荷。研究发现，块体InAlAs不具有持续光导性(PPC)或载流子冻结的特征，并且二维电子气(2DEG)结构的输运性质受冷却和照明的影响必须小于类似的AlGaAs/GaAs结构。

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Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics

It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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