InAlAs/InGaAs高电子迁移率晶体管的可靠性问题

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147388

M. Tutt, G. Ng, D. Pavlidis, J. Mansfield

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引用次数: 16

摘要

讨论了热应力对亚微米In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>或=0.53)hemt在200℃下贮存长达100 h的影响。发现直流特性下降。I/sub DSS/由299 mA/mm降至182 mA/mm。G/sub /m /从513 mS/mm下降到209 mS/mm。还测量了微波性能的下降。f/sub T/和f/sub max/分别降低30%和20%以上。有证据表明，通道/缓冲界面和层的变化是由额外捕获的存在造成的。欧姆接触的测量显示从0.19欧米茄-mm增加到0.26欧米茄-mm。给出了x射线分析和霍尔表征结果。

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Reliability issues of InAlAs/InGaAs high-electron-mobility transistors

The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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