InP的植入损伤:热稳定性效应

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147462

A. Goltzené, B. Meyer, C. Schwab

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引用次数: 0

摘要

利用常规电子顺磁共振技术监测了在常规热等时退火过程中快中子诱导的V/sub p/和p/ sub In/缺陷的衰变。在450℃时发现了去除未掺杂InP中中子辐照引起的晶格损伤的最佳温度，在更高温度下退火可以进一步显示出体效应。在热处理过程中，观察到费米能级在P/sub /sup 0%+/中隙能级上的钉住

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Implantation damage in InP: thermal stability effects

The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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