InP的植入损伤:热稳定性效应

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147462

A. Goltzené, B. Meyer, C. Schwab

{"title":"InP的植入损伤:热稳定性效应","authors":"A. Goltzené, B. Meyer, C. Schwab","doi":"10.1109/ICIPRM.1991.147462","DOIUrl":null,"url":null,"abstract":"The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Implantation damage in InP: thermal stability effects\",\"authors\":\"A. Goltzené, B. Meyer, C. Schwab\",\"doi\":\"10.1109/ICIPRM.1991.147462\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147462\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用常规电子顺磁共振技术监测了在常规热等时退火过程中快中子诱导的V/sub p/和p/ sub In/缺陷的衰变。在450℃时发现了去除未掺杂InP中中子辐照引起的晶格损伤的最佳温度，在更高温度下退火可以进一步显示出体效应。在热处理过程中，观察到费米能级在P/sub /sup 0%+/中隙能级上的钉住

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Implantation damage in InP: thermal stability effects

The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

自引率

0.00%

发文量