栅格不匹配In/sub x/Ga/sub 1-x/As光电二极管阵列检测到1.7 μ m的电学特性

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147314

F. Ducroquet, D. Pogány, S. Ababou, G. Guillot, S. Krawczyk, K. Schohe, C. Klingelhofer

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引用次数: 0

摘要

讨论了在空间应用中用于检测高达1.7 μ m的点阵失配In/sub x/Ga/sub 1-x/As光电二极管阵列。在某些二极管上观察到的异常高的反向电流可以用电场辅助产生过程来解释。失配位错在这一过程中的作用似乎是重要的，正如局部光致发光信号的降低与高反向电流之间的相关性所证实的那样。描述了用导纳光谱测量方法检测这些光电二极管上的一个深能级

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Electrical characterization of lattice-mismatched In/sub x/Ga/sub 1-x/As photodiode arrays for detection to 1.7 mu m

Lattice mismatched In/sub x/Ga/sub 1-x/As photodiode arrays used for the detection of up to 1.7 mu m in space applications are discussed. The abnormally high reverse current observed on some diodes is interpreted by the electric field assisted generation process. The role of misfit dislocations in the process seems to be important, as established by the correlation between local lowering of photoluminescence signal and the high reverse current. The detection of one deep level on these photodiodes by admittance spectroscopy measurements is described.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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