离子注入单片集成平面InP/InGaAs/InP:Fe光接收器

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147401

D. Rømer, H. Albrecht, L. Hoffmann, J. Walter, G. Ebbinghaus

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引用次数: 1

摘要

讨论了集成引脚光电二极管(PD)和结场效应晶体管(JFET)的结构和制作方法。采用选择性氮注入降低串联电阻，PD器件获得了5.8 GHz的3db带宽和87%的外量子效率。通过在沟道层下选择性p注入，可以调节栅极长度为1.5 μ m的JFET的掐断电压和漏极电流

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Ion implanted monolithically integrated planar InP/InGaAs/InP:Fe photoreceiver

The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5- mu m gate length have been adjusted with a selective p implantation beneath the channel layer.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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