GaInAs, AlInAs和InP多层结构的非破坏性厚度测量

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147411

C. Pickering, N.S. Garawal, D. Lancefield, J. Piel, R. Blunt

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引用次数: 2

摘要

本文讨论了利用椭圆偏振光谱无损测量技术测量InP衬底上各种三层和四层结构的厚度。各层厚度范围从150 AA到4500 AA，椭圆偏振模型得到的值与传统的破坏性厚度测量(透射电镜和选择性蚀刻)得到的值非常吻合。证明了椭偏光谱建模方法对各层厚度变化的敏感性，并与相同层的x射线衍射建模方法进行了比较。

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Non-destructive thickness measurements of GaInAs, AlInAs, and InP multilayer structures

Thickness measurements of various three and four layer structures on InP substrates using the non-destructive technique of spectroscopic ellipsometry are discussed. The individual layer thicknesses ranged from 150 AA to 4500 AA, and excellent agreement was found between the values obtained from the ellipsometric model and the values obtained on the same samples from conventional destructive thickness measurements (TEM and selective etching). The sensitivity of the spectroscopic ellipsometry modeling procedure to changes in thickness of the various layers is demonstrated and compared to X-ray diffraction modeling of the same layers.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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