n-InP衬底晶格参数变化对InP/InGaAsP-DHS复合材料性能的影响

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147364

A. Knauer, R. Staske, J. Krausslich, R. Kittner

{"title":"n-InP衬底晶格参数变化对InP/InGaAsP-DHS复合材料性能的影响","authors":"A. Knauer, R. Staske, J. Krausslich, R. Kittner","doi":"10.1109/ICIPRM.1991.147364","DOIUrl":null,"url":null,"abstract":"Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"99 1","pages":"327-330"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS\",\"authors\":\"A. Knauer, R. Staske, J. Krausslich, R. Kittner\",\"doi\":\"10.1109/ICIPRM.1991.147364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"99 1\",\"pages\":\"327-330\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了InP衬底和InP/InGaAsP双异质结构(DHSs)的精确晶格参数和光致发光测量。测量结果表明，在自由载流子浓度富集的区域，使用强n型掺杂的InP衬底实现了晶格扩张

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS

Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

自引率

0.00%

发文量