2012 IEEE Silicon Nanoelectronics Workshop (SNW)最新文献_第3页

Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs 基于伪自旋mosfet的新型非易失SRAM单元的静态噪声裕度和功率门控效率分析

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243330

Y. Shuto, S. Yamamoto, S. Sugahara

引用次数: 12

Optoelectrical lifetime evaluation of single holes in SOI MOSFET SOI MOSFET单孔光电寿命评估

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243297

Wei Du, D. Putranto, H. Satoh, A. Ono, P. Priambodo, D. Hartanto, H. Inokawa

引用次数: 0

Silicon microfabrication technologies for THz applications 太赫兹应用的硅微加工技术

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243285

C. Jung-Kubiak, J. Gill, T. Reck, C. Lee, J. Siles, G. Chattopadhyay, R. Lin, K. Cooper, I. Mehdi

引用次数: 12

Selective gas sensing with a single graphene-on-silicon transistor 单石墨烯-硅晶体管的选择性气体传感

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243283

A. Balandin, S. Rumyantsev, G. Liu, M. Shur, R. Potyrailo

{"title":"Selective gas sensing with a single graphene-on-silicon transistor","authors":"A. Balandin, S. Rumyantsev, G. Liu, M. Shur, R. Potyrailo","doi":"10.1109/SNW.2012.6243283","DOIUrl":"https://doi.org/10.1109/SNW.2012.6243283","url":null,"abstract":"The low-frequency 1/f noise in graphene transistors has been studied extensively owing to the proposed graphene applications in analog devices and communication systems [1-5]. The studies were motivated by the fact that the low-frequency noise can be up-converted by device nonlinearity and contribute to the phase noise of the system. Similarly, the sensor sensitivity is often limited by the electronic low-frequency noise. Therefore, noise is usually considered as one of the main limiting factors for the device or overall system operation. However, the electronic noise spectrum itself can be used as a sensing parameter increasing the sensor sensitivity and selectivity. Here, we show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of the graphene-on-Si transistor. Our study showed that some gases change the electrical resistance of pristine graphene devices without changing their low-frequency noise spectra while other gases modify the noise spectra by inducing Lorentzian components with distinctive features. The characteristic corner frequency fC of the Lorentzian noise bulges in graphene devices is different for different chemicals and varies from fC=10 - 20 Hz for tetrahydrofuran to fC=1300 - 1600 Hz for chloroform. We tested the selected set of chemicals vapors on different graphene device samples and alternated different vapors for the same samples. The obtained results indicate that 1/f noise in combination with other sensing parameters can allow one to achieve the selective gas sensing with a single pristine graphene transistor. Our method of gas sensing with graphene does not require graphene surface functionalization or fabrication of an array of the devices with each tuned to a certain chemical. The observation of the Lorentzian components in the vapor-exposed graphene can also help in developing an accurate theoretical description of the noise mechanism in graphene.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":"54 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83852206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs 取向和尺寸对栅极全方位矩形锗纳米线场效应管弹道电子输运特性的影响

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243360

S. Mori, N. Morioka, J. Suda, T. Kimoto

引用次数: 0

Investigation into the effect of the variation of gate dimensions on program characteristics in 3D NAND flash array 栅极尺寸变化对三维NAND闪存阵列程序特性影响的研究

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243320

J. Y. Seo, Yoon Kim, Se Hwan Park, Wandong Kim, Do-Bin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park

引用次数: 2

Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot 重掺磷硅量子点和反向感应硅量子点的制备与评价

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243288

J. Kamioka, T. Kodera, K. Horibe, Y. Kawano, S. Oda

引用次数: 0

Transport in graphene on boron nitride 石墨烯在氮化硼上的传输

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243327

D. Ferry

{"title":"Transport in graphene on boron nitride","authors":"D. Ferry","doi":"10.1109/SNW.2012.6243327","DOIUrl":"https://doi.org/10.1109/SNW.2012.6243327","url":null,"abstract":"Graphene has become of great interest in recent years for its unique band structure and prospective importance in both microwave and logic devices. Recently, the use of a boron nitride layer between the graphene and the silicon dioxide substrate has shown enhanced mobilities due to displacing the disorder charge, typical on the oxide, further from the graphene material. On the other hand, like the oxide, boron nitride has polar optical modes which can interact with the carriers in graphene to lower their mobility. We have used an ensemble Monte Carlo technique to study the transport in graphene on a boron nitride layer. Scattering by the intrinsic phonons of graphene, as well as by the flexural modes of the rippled layer, and the remote polar mode of boron nitride has been included. The flexural modes are described by the model of Castro et al. While the EMC uses the simple Dirac band structure, coupling constants for the intrinsic phonon modes are taken by fitting to scattering rates determined from first-principles calculations. We find that, at low temperatures, the mobility is dominated primarily by the intrinsic graphene phonons and the flexural modes. This arises as the interfacial polar mode of boron nitride lies at an energy of 200 meV, which is largely too high to interact well with the majority of the carriers in graphene. On the other hand, at room temperature, the mobility begins to be dominated by the remote polar mode of the boron nitride. Nevertheless, the prospects of reaching a high velocity, needed for device performance particularly at microwave frequencies, remains very good.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":"88 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86338211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Reinvestigation of dot formation mechanisms in silicon nanowire channel single-electron/hole transistors operating at room temperature 室温下硅纳米线通道单电子/空穴晶体管中点形成机制的再研究

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243337

R. Suzuki, M. Nozue, T. Saraya, T. Hiramoto

引用次数: 0

Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode 用参比电极分析制备的SiNW生物传感器在水环境中的滞后特性

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243305

Jung Han Lee, Jieun Lee, Min-Chul Sun, W. Lee, M. Uhm, Seonwook Hwang, I. Chung, D. M. Kim, Dae Hwan Kim, Byung-Gook Park

引用次数: 0