Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs

Abstract

We calculated the conduction band structure of GeNWs by a tight-binding model and obtained the fundamental understanding of electron transport characteristics in [001], [110], [111], and [112] GeNW FETs. The simulation of ballistic electron transport revealed that [110] GeNW FETs on the (001) face achieve high drive current as well as high injection velocity, being the best choice for n-channel FETs.