Optoelectrical lifetime evaluation of single holes in SOI MOSFET

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243297

Wei Du, D. Putranto, H. Satoh, A. Ono, P. Priambodo, D. Hartanto, H. Inokawa

引用次数: 0

Abstract

Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.

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SOI MOSFET单孔光电寿命评估

提出了一种评估SOI MOSFET单孔寿命的光电方法，该方法采用连续光照射器件，分析了数字化漏极电流的直方图。结果表明，空穴数越少，横向电场越大，空穴寿命越长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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