2012 IEEE Silicon Nanoelectronics Workshop (SNW)最新文献_第8页

Device structure for the characterization of nanowire thermocouples 表征纳米线热电偶的器件结构

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243307

G. Szakmany, P. Krenz, A. Orlov, G. Bernstein, W. Porod

引用次数: 0

Bidirectional selection device characteristics of ultra-thin (<3nm) TiO2 layer for 3D vertically stackable ReRAM application 双向选择器件特性超薄(<3nm) TiO2层用于3D垂直可堆叠ReRAM应用

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243332

J. Woo, Jubong Park, Jungho Shin, G. Choi, Seonghyun Kim, Wootae Lee, Sangsu Park, Daeseok Lee, E. Cha, H. Hwang

引用次数: 1

Graphene-diamond-silicon devices with increased current-carrying capacity: sp2-Carbon-sp3-Carbon-on-Silicon technology 增加载流能力的石墨烯-金刚石-硅器件:sp2-碳-sp3-碳-硅技术

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243282

Jie Yu, Guanxiong Liu, A. Sumant, A. Balandin

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引用次数: 0

Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array 基于n-Si/HfO2器件的1d1r交叉棒存储阵列整流特性及实现

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243357

F. Zhang, P. Huang, B. Chen, D. Yu, Y. Fu, L. Ma, B. Gao, L. Liu, X. Liu, J. Kang

引用次数: 2

4kb nonvolatile nanogap memory (NGpM) with 1 ns programming capability 4kb非易失性纳米隙存储器(NGpM)，具有1ns编程能力

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243334

T. Takahashi, S. Furuta, Y. Masuda, S. Kumaragurubaran, T. Sumiya, M. Ono, Y. Hayashi, T. Shimizu, H. Suga, M. Horikawa, Y. Naitoh

引用次数: 2

Charge-trap flash memory devices fabricated with nano-scale patterns on the Si3N4 trapping layer 在氮化硅捕获层上制备具有纳米尺度图案的电荷阱闪存器件

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI: 10.1109/SNW.2012.6243350

H. An, Kyong Heon Kim, H. Kim, W. Cho, Tae Geun Kim

引用次数: 1

Electronic band structures of graphene nanomeshes 石墨烯纳米网的电子能带结构

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-02-29 DOI: 10.1109/SNW.2012.6243363

R. Sako, N. Hasegawa, Hideaki Tsuchiya, M. Ogawa

引用次数: 1