Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array

Abstract

Excellent rectifying characteristics are demonstrated in the fab-friendly n-Si/HfO2/Ni/TiN devices with rectification ratio of >;107 and the driving current of 1mA as a 1D-like selector. The rectified unipolar switching behaviors are demonstrated in the 1D1R cell structured with a diode-like device of n-Si/HfO2/Ni/TiN (1D) and a unipolar RRAM of n+-Si/HfOx/Ni/TiN (1R). Based on the measured I-V characteristics, these excellent selection behavior can be implemented in the cross-bar memory array of >;64K bits RRAM with large read margin.