J. Woo, Jubong Park, Jungho Shin, G. Choi, Seonghyun Kim, Wootae Lee, Sangsu Park, Daeseok Lee, E. Cha, H. Hwang
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Bidirectional selection device characteristics of ultra-thin (<3nm) TiO2 layer for 3D vertically stackable ReRAM application
We propose the feasibility of bidirectional selection device characteristics in ultrathin (<;3nm) TiO2 layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as “forming” and “reset” processes in oxide, virtual electrode/sub-3nm-thick TiO2/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (~105) and showed the feasibility of high current density (>;106A/cm2).
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