Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot

We realized lithographically-defined electrically-tunable silicon quantum dot (QD) and charge sensor. Two types of device were fabricated and measured. One is heavily P-doped, and the other is back gate (BG)-induced undoped QD device. I-V characteristic of QD and charge sensor was clearly observed in both devices. Then, we estimate capacitance between the charge sensor and QD or two side gates (SGs) from the measurement and the simulation, and compared two devices in terms of their charging energy.