2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)最新文献_第3页

A model for evaluating cumulative oxide damage from multiple plasma processes 一个评估多重等离子体过程累积氧化损伤的模型

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843941

K. Noguchi, A. Matsumoto, N. Oda

引用次数: 14

Effect of Ti insertion between Cu and TiN layers on electromigration reliability in Cu/(Ti)/TiN/Ti layered damascene interconnects Cu和TiN层间Ti插入对Cu/(Ti)/TiN/Ti层状damascene互连电迁移可靠性的影响

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843935

K. Abe, S. Tokitoh, Shih-Chang Chen, J. Kanamori, H. Onoda

{"title":"Effect of Ti insertion between Cu and TiN layers on electromigration reliability in Cu/(Ti)/TiN/Ti layered damascene interconnects","authors":"K. Abe, S. Tokitoh, Shih-Chang Chen, J. Kanamori, H. Onoda","doi":"10.1109/RELPHY.2000.843935","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843935","url":null,"abstract":"The effect of Ti insertion between Cu and TiN layers on electromigration in Cu/(Ti)/TiN/Ti layered damascene interconnects was investigated. Ti insertion enhanced the wetting property of Cu to underlayer TiN and increased the sheet resistance of the layered film when annealed. This resistance change was caused by diffusion of Ti into the Cu film and resulting in reduction in cross-sectional area of the Cu film. The insertion of thinner Ti with air-exposure before Cu deposition was found to be effective in obtaining a lower sheet resistance for the composite Cu film and for the line resistance of a Cu damascene structure. The air-exposure treatment did not influence the via resistance. The Cu damascene interconnects with Ti insertion have up to 100 times longer electromigration lifetime than those without Ti insertion. Microstructures of the Cu film such as grain size, its distribution and texture were almost the same in samples with and without Ti insertion. The improvement of interface quality between Cu and underlayer, which would have an impact on the diffusivity of Cu atoms at the interface, and the existence of Ti in Cu play an important role in improving electromigration resistance.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86072776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices 中子诱导的硼裂变是深亚微米SRAM器件软误差的主要来源

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843906

R. Baumann, E. Smith

引用次数: 95

Trends in silicon germanium BiCMOS integration and reliability 硅锗BiCMOS集成与可靠性的发展趋势

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843921

J. Dunn, D. Harame, S. St. Onge, A. Joseph, N. Feilchenfeld, K. Watson, S. Subbanna, G. Freeman, S. Voldman, D. Ahlgren, R. Johnson

引用次数: 19

One time programmable drift antifuse cell reliability 一次性可编程漂移防熔丝电池可靠性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843909

Philippe Candelier, Nathalie Villani, J. Schoellkopf, Patrick Mortini

引用次数: 24

Improved reliability prediction through reduced-stress temperature cycling 通过降低应力温度循环改善可靠性预测

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843920

A. Cory

{"title":"Improved reliability prediction through reduced-stress temperature cycling","authors":"A. Cory","doi":"10.1109/RELPHY.2000.843920","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843920","url":null,"abstract":"Standards for conditions and criteria of reliability stresses, in the absence of proven reliability models, have long been based on the capabilities and historical performance of processes and materials. A widely accepted model for temperature cycling has evolved in this decade. The author uses this model and case studies of specific failure mechanisms to show that the use of the commonly accepted condition C in temperature cycling can create unreasonably high acceleration of thermal stresses, possibly masking failure mechanisms more relevant to field applications. This often results in the pursuit of corrective action for mechanisms unlikely to occur in application environments, and may actually prevent detection of mechanisms more likely to occur in the field. For temperature cycling of present technology encapsulated packages, it is concluded that 1000 cycles of condition B is a superior criterion to 500 cycles of condition C. As an extension of this discussion, it is proposed to design ongoing and future reliability evaluations around evolving understanding of the physics of failure and the real needs of applications.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83417400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy? 氧化击穿场加速——精确的阳极孔注入模型能否解决E与1/E的争议?

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843886

M. A. Alam, J. Bude, A. Ghetti

引用次数: 109

Localizing power to ground shorts in a chips-first MCM by scanning SQUID microscopy 通过扫描SQUID显微镜在芯片优先的MCM中定位电源到接地短路

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843949

W. Vanderlinde, M.E. Cheney, E. B. McDaniel, K. L. Skinner, L. A. Knauss, B. M. Frazier, H. Christen

引用次数: 6

Experimental analysis of gate oxide degradation-existence of neutral trap precursor, single and multiple trap-assisted-tunneling for SILC mechanism 栅极氧化物降解的实验分析——中性阱前驱体的存在，单阱和多阱辅助隧穿SILC机制

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843892

R. Yamada, J. Yugami, M. Ohkura

引用次数: 11

Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures 智能电源技术ESD防护结构ESD应力温度分布的仿真与实验研究

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843931

K. Esmark, C. Furbock, H. Gossner, G. Groos, M. Litzenberger, D. Pogany, R. Zelsacher, M. Stecher, E. Gornik

引用次数: 22