中子诱导的硼裂变是深亚微米SRAM器件软误差的主要来源

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843906

R. Baumann, E. Smith

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引用次数: 95

摘要

首次报道了宇宙中子诱导/sup 10/B裂变对生产逻辑器件的影响。使用特殊的20 K冷中子束来加速SER事件，我们明确地证明了中子诱导/sup 10/B裂变是用硼磷硅酸盐玻璃(BPSG)制造的深亚微米sram的软误差的重要来源。

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Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices

The impact of cosmic neutron induced /sup 10/B fission in production logic devices is reported for the first time. Using a special 20 K cold neutron beam to accelerate SER events, we unambiguously demonstrate that neutron induced /sup 10/B fission is a significant source of soft errors in deep-submicron SRAMs fabricated with borophosphosilicate glass (BPSG).

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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